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  • 1
    Electronic Resource
    Electronic Resource
    Production and Secretion of Adrenomedullin by Cultured Choroid Plexus Carcinoma Cells (1997)
    Oxford, UK : Blackwell Science Ltd
    Journal of neurochemistry 68 (1997), S. 0 
    Details
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: Adrenomedullin is a potent vasodilator peptide that was originally isolated from pheochromocytoma. The production and secretion of adrenomedullin by cultured choroid plexus carcinoma cells were studied by radioimmunoassay and northern blot hybridization. Choroid plexus carcinoma is a rare malignant tumor derived from the epithelium of the choroid plexus. Immunoreactive adrenomedullin was detected in the conditioned medium of choroid plexus carcinoma cells (40.8 ± 7.5 fmol/105 cells/24 h; mean ± SEM, n = 5). Reverse-phase HPLC of the conditioned medium showed one major peak of the immunoreactive peptide eluting in the position of synthetic human adrenomedullin and two smaller peaks eluting earlier. Addition of interleukin-1β (10 ng/ml) alone or in combination with three cytokines, interferon-γ (100 U/ml), tumor necrosis factor-α (20 ng/ml), and interleukin-1β (10 ng/ml), caused significant increases in the immunoreactive adrenomedullin concentrations in the medium (∼175 and 293% of the control level, respectively). Northern blot analysis showed the expression of 1.6-kb adrenomedullin mRNA in the total RNA sample prepared from cultured choroid plexus carcinoma cells. Treatment with either interleukin-1β or the combination of three cytokines caused significant increases in levels of adrenomedullin mRNA in parallel with those in immunoreactive adrenomedullin concentrations in the conditioned medium. These findings raise a possibility that adrenomedullin is secreted from the choroid plexus and has physiological roles in the CNS via the CSF. In addition, adrenomedullin secreted from choroid plexus carcinoma may be related to the pathophysiology of the tumor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1471-4159.1997.68020726.x
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  • 2
    Electronic Resource
    Electronic Resource
    Gamma-knife radiosurgery for brain metastasis of renal cell carcinoma: Results in 42 patients (2002)
    Melbourne, Australia : Blackwell Science Pty
    International journal of urology 9 (2002), S. 0 
    Details
    ISSN: 1442-2042
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Background: The present study provides data from clinical experience with gamma-knife radiosurgery (GK) in patients with brain metastasis from renal cell carcinoma (RCC) and shows the value of this less invasive treatment modality. Methods: Forty-two patients received GK. Twenty of the 42 cases had multiple brain metastases. Extracranial metastases were observed in the lung (38 cases), bone (12 cases), liver (9 cases), lymph node (5 cases) and skin (6 cases). Results: Neurological symptoms seen in 40 patients were rapidly improved after GK in 32 patients (80%). Magnetic resonance imaging (MRI) evaluation after GK in 32 patients showed the disappearance of brain tumor in 9 patients (28%). Complete response was obtained by GK in tumors up to 30 mm in diameter. Repeated GK for newly developed lesions was conducted in 11 patients. Extracranial tumor resection was conducted in 7 cases (lung: 3, skin: 2, liver: 1, adrenal: 1). Chemo-radiotherapy or immunotherapy was effective in 8 cases (lung: 5, liver: 2, bone: 1). The actual one-, two- and three-year survival rates were 44.9%, 16.8%, and 11.2%, respectively. The median survival time was 12.5 months. In univariate analysis, the patients with successfully treated extracranial metastases had significantly better prognosis. In multivariate analysis, the patients with Karnofsky performance scale (KPS) ≥ 80%, who were treated by GK more than once and obtained complete response (CR) or partial response (PR) by GK, had significantly better prognosis. Conclusion: Gamma-knife radiosurgery for RCC is an effective non-invasive modality of treatment. It offers a high local control rate and an improved quality of life and survival rate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1442-2042.2002.00531.x
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  • 3
    Electronic Resource
    Electronic Resource
    Soft-breakdown-suppressed ultrathin atomic-layer-deposited silicon–nitride/SiO2 stack gate dielectrics for advanced complementary metal–oxide–semiconductor technology (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3488-3490 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a high-quality, ultrathin atomic-layer-deposited silicon–nitride/SiO2 stack gate dielectric. p+-polycrystalline silicon gate metal–oxide–semiconductor (MOS) capacitors with the proposed dielectrics showed enhanced reliability with respect to conventional SiO2. An exciting feature of suppressed soft-breakdown (SBD) events is observed in ramped voltage stressing which has been reconfirmed during time-dependent-dielectric breakdown measurements under constant field stressing. Introducing the idea of injected-carrier-induced localized physical damages resulting in the formation of conductive filaments near both Si/SiO2 and poly-Si/SiO2 interfaces, a model has been proposed to explain the SBD phenomena observed in the conventional SiO2 dielectrics. It is then consistently extended to explain the suppressed SBD in the proposed dielectrics. The reported dielectric can be a good choice to meet the urgent need for highly reliable ultrathin gate dielectrics in nanoscale complementary-MOS technology. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1420586
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  • 4
    Electronic Resource
    Electronic Resource
    NH3-annealed atomic-layer-deposited silicon nitride as a high-k gate dielectric with high reliability (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1252-1254 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Extremely thin (equivalent oxide thickness, Teq=1.2 nm) silicon-nitride high-k (εr=7.2) gate dielectrics have been formed at low temperatures (≤550 °C) by an atomic-layer-deposition (ALD) technique with subsequent NH3 annealing at 550 °C. A remarkable reduction in leakage current, especially in the low dielectric voltage region, which will be the operating voltage for future technologies, has made it a highly potential gate dielectric for future ultralarge-scale integrated devices. Suppressed soft breakdown events are observed in ramped voltage stressing. This suppression is thought to be due to a strengthened structure of Si–N bonds and the smoothness and uniformity at the poly-Si/ALD-silicon-nitride interface. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1447314
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  • 5
    Electronic Resource
    Electronic Resource
    Low-temperature formation of silicon nitride gate dielectrics by atomic-layer deposition (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 665-667 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin (equivalent oxide thickness Teq of 2.4 nm) silicon nitride layers were deposited on Si substrates by an atomic-layer-deposition (ALD) technique at low temperatures (〈550 °C). The interface state density at the ALD silicon nitride/Si-substrate interface was almost the same as that of the gate SiO2. No hysteresis was observed in the gate capacitance–gate voltage characteristics. The gate leakage current was the level comparable with that through SiO2 of the same Teq. The conduction mechanism of the leakage current was investigated and was found to be the direct tunneling. The ALD technique allows us to fabricate an extremely thin, very uniform silicon nitride layer with atomic-scale control for the near-future gate dielectrics. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1388026
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  • 6
    Electronic Resource
    Electronic Resource
    Atomic-layer-deposited silicon-nitride/SiO2 stacked gate dielectrics for highly reliable p-metal–oxide–semiconductor field-effect transistors (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2855-2857 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An extremely thin (∼0.4 nm) silicon-nitride layer has been deposited on thermally grown SiO2 by an atomic-layer-deposition (ALD) technique. The boron penetration through the stacked gate dielectrics has dramatically been suppressed, and the reliability has been significantly improved, as confirmed by capacitance–voltage, gate-current–gate-voltage, and time-dependent dielectricbreakdown characteristics. The ALD technique allows us to fabricate an extremely thin, very uniform silicon-nitride layer with atomic-scale control. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1320847
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  • 7
    Electronic Resource
    Electronic Resource
    Enhancement of Glucose-induced Insulin Secretion in Transgenic Mice Overexpressing Human VIP Gene in Pancreatic β Cells (1996)
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 805 (1996), S. 0 
    Details
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1749-6632.1996.tb17486.x
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  • 8
    Electronic Resource
    Electronic Resource
    Perioperative factors related to the development of ischemic complications in patients with moyamoya disease (1997)
    Springer
    Child's nervous system 13 (1997), S. 68-72 
    Details
    ISSN: 1433-0350
    Keywords: Key words Moyamoya disease ; Brain ischemia ; Anesthesia ; Revascularization ; Perioperative management
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract In purpose of clarifying the risk factors of perioperative ischemic complications in cases with moyamoya disease, a retrospective study was conducted on the perioperative care of 36 patients who underwent vascular reconstruction for moyamoya disease. Following surgery, 8 patients developed ischemic complications (5 with minor completed strokes and 3 with transient ischemic attacks). Three factors including the presence of a pre-operative low density area (LDA), intra-operative urinary output, and a reduction in the hematocrit significantly differed with complications and those without. In an evaluation of individual cases, intra-operative hypercapnia, hypotension, and a reduction in the circulating blood volume also were identified as potential factors associated with complications. On the basis of these findings, it was concluded that it is necessary to infuse an adequate amount of fluids, maintain normocapnic and normothermic states, and actively correct anemia in patients undergoing vascular reconstruction for moyamoya disease. It is also necessary to pay particular attention to perioperative care in patients in whom a LDA is detected by pre-operative CT.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003810050044
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  • 9
    Electronic Resource
    Electronic Resource
    Anterior sacral meningocele completely occupied by an epidermoid tumor (1999)
    Springer
    Child's nervous system 15 (1999), S. 209-211 
    Details
    ISSN: 1433-0350
    Keywords: Key words Anterior sacral meningocele ; Epidermoid tumor ; Magnetic resonance imaging
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract A 2-year-old girl presented with an anterior sacral meningocele completely occupied by an epidermoid tumor. Preoperative magnetic resonance imaging had shown the meningocele with contents of the same intensity as cerebrospinal fluid. Surgery via a posterior sacral approach disclosed the tumor beneath an unexpected membrane inside the meningocele. Additionally, the presence of pus inside epidermoid tumor suggested that possible episodes of asymptomatic meningitis or other infection might have occurred before treatment, these being the major complication in anterior sacral meningocele. Therefore, we recommend that surgical treatment should be performed at the earliest possible stage in childhood, once the diagnosis is established, and dural plasty carried out to prevent infectious complications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003810050372
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  • 10
    Electronic Resource
    Electronic Resource
    Attempts to induce immune-mediated cerebral arterial injury for an experimental model of moyamoya disease (1992)
    Springer
    Child's nervous system 8 (1992), S. 263-267 
    Details
    ISSN: 1433-0350
    Keywords: Cerebral arterial injury ; Cerebral arteritis ; Experimental model ; Intracisternal injection ; Moyamoya disease ; Serum sickness
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract To examine the possible role of immune complex-mediated reactions in moyamoya disease, a novel experimental system using a serum sickness vasculitis model combined with intracisternal administration of antibodies or antigens was developed. Twenty-eight male Japanese white rabbits were divided into four experimental groups. Group I was treated twice with intravenous injections of heterologous serum. In group II, intracisternal administration of antibodies or antigens was combined with the second injection of serum. Group III received a single intravenous injection of antigens simulaneously with intracisternal administration of antibodies. Group IV was a technical control group. Cerebral arteritis, although likely in the initial process, was induced only in groups II and III. This study suggests that the cerebral arteries rarely develop arteritis in a serum sickness model alone. The cerebral arteries may require additional intracisternal administration of antibodies or antigens to induce in situ deposition of immune complexes around them.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00300793
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