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  • 1
    Electronic Resource
    Electronic Resource
    Long wavelength InAs/InGaSb infrared detectors: Optimization of carrier lifetimes (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7143-7152 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The performance characteristics of type-II InAs/InxGa1−xSb superlattices for long and very long-wave infrared detection are discussed. This system promises benefits in this wavelength range over conventional technology based on Hg1−xCdxTe, in part because of suppressed band-to-band Auger recombination rates which lead to improved values of detectivity. The formalism for calculating Auger rates in superlattices is developed and the physical origin of Auger suppression in these systems is discussed. Accurate K⋅p band structures are used to obtain radiative, electron–electron, hole–hole, and band-to-band Auger rules, as well as shallow trap level assisted Auger recombination rates for photodiodes. Theoretical limits for high temperature operation of ideal photovoltaic detectors are presented and compared with HgCdTe. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360422
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  • 2
    Electronic Resource
    Electronic Resource
    Theoretical performance of InAs/ InxGa1−xSb superlattice-based midwave infrared lasers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1940-1942 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that for appropriate layer widths the performance of ideal InAs/InxGa1−xSb superlattice-based midwave injection lasers can be limited by radiative rather than Auger recombination. The threshold carrier densities and lifetimes are calculated over the 77–300 K temperature range at 3.5 μm. Lifetimes are obtained from detailed calculations of band-to-band Auger and radiative recombination rates based on realistic nonparabolic band structures. This system is therefore a promising new laser candidate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357682
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  • 3
    Electronic Resource
    Electronic Resource
    Temperature limits on infrared detectivities of InAs/InxGa1−xSb superlattices and bulk HgxCd1−xTe (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4774-4776 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Detailed theoretical calculations of Auger and radiative recombination rates for an optimized InAs/InxGa1−xSb superlattice (SL) and bulk HgxCd1−xTe (MCT) show that 300 K background limited operation for a 60° field of view can be theoretically achieved up to 130 K for the 11 μm SL and up to 185 K for 5 μm MCT. The SL structure is theoretically superior to MCT for 11 μm operation. The converse is true at 5 μm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354348
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  • 4
    Electronic Resource
    Electronic Resource
    Superlattice excitons and optical absorption (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 7369-7378 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A formalism based on the superlattice crystal coordinate representation, which is valid for arbitrary well and barrier widths, is developed and applied to the Wannier exciton problem. A simple model for the electron-hole Coulomb interaction within the independent subband approximation permits nonvariational calculation of exciton binding energies, oscillator strengths, and optical absorption of both bound and continuum exciton states. The effects of growth axis directed electric and magnetic fields are emphasized. Numerical results for GaAs/ Ga1−xAlxAs and In1−xGaxAs/GaAs exciton binding energies and oscillator strengths as functions of well width, barrier width, and electric and magnetic field strengths show excellent agreement with experiment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355005
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  • 5
    Electronic Resource
    Electronic Resource
    Evidence for quantum well asymmetry in optical absorption (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1069-1071 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Some previously unexplained features of the experimentally determined optical spectra of GaAs/Ga1−xAlxAs heterostructures are theoretically explained in terms of unintentionally introduced asymmetries in the shape of semiconductor quantum wells which break the usual optical selection rules. Various mechanisms that may be responsible for well asymmetries are suggested. Their measurement may be a useful characterization tool in quantum well fabrication.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107719
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  • 6
    Electronic Resource
    Electronic Resource
    Auger lifetime enhancement in InAs–Ga1−xInxSb superlattices (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3160-3162 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have experimentally and theoretically investigated the Auger recombination lifetime in InAs–Ga1−xInxSb superlattices. Data were obtained by analyzing the steady-state photoconductive response to frequency-doubled CO2 radiation, at intensities varying by over four orders of magnitude. Theoretical Auger rates were derived, based on a k⋅p calculation of the superlattice band structure in a model which employs no adjustable parameters. At 77 K, both experiment and theory yield Auger lifetimes which are approximately two orders of magnitude longer than those in Hg1−xCdxTe with the same energy gap. This finding has highly favorable implications for the application of InAs–Ga1−xInxSb superlattices to infrared detector and nonlinear optical devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111325
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  • 7
    Electronic Resource
    Electronic Resource
    Minority carrier lifetimes in ideal InGaSb/InAs superlattices (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2905-2907 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Calculations of band-to-band Auger and radiative recombination lifetimes of the recently proposed InxGa1−xSb/InAs superlattices (SL) show them to be promising infrared detectors. Several superlattices with energy gaps in the 5–11 μm range exhibit suppressed p-type Auger recombination rates due to a large light hole–heavy hole splitting. The p-type Auger lifetime at 77 K of an 11 μm InxGa1−xSb/InAs SL is found to be, respectively, three and five orders of magnitude longer than those of bulk and superlattice HgCdTe with the same energy gap. The n-type lifetimes are comparable.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108480
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