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  • 1
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 546-549 (May 2007), p. 1877-1880 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: A new approach of Cu-Ni substrate is reported, where the cubic textured Cu tape wasfabricated by thermal-mechanical process, then a Ni layer was electro-deposited on the cubic texturedCu substrate. This approach is also suitable for fabricating long cubic textured metallic substrate forcoated conductors. The formation of substrate texture and its thermal stability were investigated byXRD. After electro-depositing Ni layer, the sample has sharper cubic texture with [removed info]ω = 5.2o and [removed info]φ =7.1o, and samples’ texture becames even better ([removed info]ω = 5 o and [removed info]φ = 5.2o) after annealing at 950℃ for30min
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 546-549 (May 2007), p. 1855-1864 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: This work reports some new studies related to critical aspects in the development ofcoated conductors (CC). New bi-axially textured tapes based on commercial copper alloys werefabricated and tested as substrates for LZO buffer layer deposited by chemical solution deposition(CSD). Such a layer form cube texture on NiW5 and Cu55Ni45 with an identical or even bettertexture than that of the substrate. It was shown that a S c(2x2) sub-layer formed at the metallicsurface as a positive effect on the nucleation. The crystallisation of LZO on Cu55Ni45 still has to beimproved, being inhibited by trapped C in the film. Recent progresses using our continuousMOCVD system are shown. A CC fabricated by an all MOCVD process has been obtained onSS/YSZIBAD substrate with high transport critical current (170 A/cm-width, at 77 K). It is alsoshown that LZOMOD can efficiently protect Ni5W RABITS from oxidation during deposition ofCeO2 layer by MOCVD under 30-40% O2 partial pressure. This opens the possibility to fabricate aCC on RABITS by MOCVD. This shows that a mixed MOD/MOCVD approach could beefficient. Finally a 2m long CC SS/YSZIBAD has been tested for fault current limiter applications.Best limitation was observed at 86 K where an equivalent energy of 340 J has been dissipated inthe CC during 12 ms without apparent damage of the CC. In a subsequent operation, the CC washowever destroyed. The causes are discussed in the perspective to design better architectures forthis application
    Type of Medium: Electronic Resource
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