Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
73 (1993), S. 4061-4063
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Highly conducting p-type CdTe films were grown by photoassisted hot-wall-beam epitaxy using Li3N as a dopant source. Doping levels can be controlled from p=4×1016 to 2×1018 cm−3, as determined by Van der Pauw measurements. The hall mobility ranges from 30 to 100 cm2/V s, depending on the hole concentration. Photoassisted growth enhances the incorporation of dopants by one order of magnitude and decreases the growth rate.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.352854
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