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  • 1
    Electronic Resource
    Electronic Resource
    Quantum beats of excitons in Zn1−xCdxSe/ZnSe multiple quantum well structures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4145-4147 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the coherent dynamics of excitons in Zn1−xCdxSe/ZnSe multiple quantum wells by means of spectrally integrated and spectrally resolved transient four-wave mixing. When simultaneously exciting the heavy- and light-hole exciton resonance, a beating of the spectrally integrated four-wave mixing signal is observed. The measured beating period does not exactly correspond to the energetic split of the involved free-exciton resonances. By including a bound-exciton state in the calculation of the four-wave mixing signal, quite a reasonable fit can be achieved yielding the dephasing times of the excitonic transitions. The spectrally resolved signal allows to determine the origin of the oscillation as a quantum beat between the light- and heavy-hole exciton. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359505
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  • 2
    Electronic Resource
    Electronic Resource
    Reciprocal space maps of PbTe/SnTe superlattices (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 3650-3653 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: PbTe/SnTe superlattices were grown on (111) BaF2 substrates by molecular beam epitaxy using PbTe as buffer layers. The individual layer thickness and number of repetitions were chosen in order to change the strain profile in the superlattices from completely pseudomorphic to partially relaxed. The superlattices structural properties were investigated by making reciprocal space maps around the asymmetric (224) Bragg diffraction points and ω/2aitch-theta scans for the (222) diffraction with a high resolution diffractometer in the triple axis configuration. With the strain information obtained from the maps, the (222) ω/2aitch-theta scan was simulated by dynamical diffraction theory. The simulated spectra of the pseudomorphic superlattices, in which the in-plane lattice constant is assumed to be the same as the PbTe buffer throughout the superlattice, fitted in a remarkably good agreement with the measured data, indicating that almost structurally perfect samples were obtained. For the thicker superlattices, the (224) reciprocal space maps revealed a complex strain profile. Our results show the importance of detailed structural characterization on the interpretation of the electrical properties. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368540
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  • 3
    Electronic Resource
    Electronic Resource
    Experimental observation of band inversion in the PbSnTe system (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 7198-7200 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The band inversion in the PbSnTe compound has been observed by optical and electrical measurements. The samples, high quality Pb1−xSnxTe epitaxial layers, have been grown by molecular-beam epitaxy on (111)BaF2 substrates. Optical transmission measurements have revealed a change in signal of the energy gap temperature derivative for samples with 0.35〈x〈0.70. In the same samples and at the same temperature, a minimum in the resistivity has been observed, showing a interrelation between the optical and electrical measurements. However, the temperature, for which the inversion occurs, is not that predicted by the band inversion model. This discrepancy is supposed to be due to the relatively high hole concentration of these samples. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371815
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  • 4
    Electronic Resource
    Electronic Resource
    Electrical properties of Pb1-xSnxTe layers with 0≤x≤1 grown by molecular beam epitaxy (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 2405-2410 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work, the electrical properties of Pb1−xSnxTe epitaxial layers with Sn composition covering the whole range were investigated. The samples were grown on (111)BaF2 substrates in a molecular beam epitaxy system using PbTe, SnTe, and Te solid sources. As the alloy composition varies from PbTe to SnTe, the hole concentration increases exponentially from 1017 to 1020 cm−3 for Te-rich sources and from 1017 to 1019 cm−3 for stoichiometric ones. The resistivity of the samples, which depends mainly on their hole concentrations, shows an exponential dependence on the temperature with a slope which decreases as x goes from 0 to 1. For all Pb1−xSnxTe samples with x in the range of 0.35–0.7, the resistivity curve shows a very well defined minimum at low temperatures. This anomalous behavior is supposed to be related to the band crossing, where the energy gap temperature coefficient changes sign. The temperatures where the minimum in the resistivity occurs only agree with the ones predicted by the band inversion model around x=0.4, exhibiting a large deviation to lower temperatures as x increases. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366051
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  • 5
    Electronic Resource
    Electronic Resource
    Band structure engineering and doping of wide gap II–VI superlattices (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2516-2518 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that the free hole concentration for nitrogen doped ZnSe/ZnTe short period superlattices with a given average Te content of 15% can be increased from 1016 to 1019 cm−3 by just increasing the SL period from 2.5 to 4.5 nm. This behavior can be understood in terms of a model that assumes a pinning of the Fermi level at an energetic position that is fixed with respect to the vacuum level. The model can be applied to other II–VI superlattices, and alternative cladding layers for blue laser diodes are proposed that should exhibit significantly higher p-doping levels than the currently used ZnMgSSe claddings. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113152
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  • 6
    Electronic Resource
    Electronic Resource
    ZnMgSeTe light emitting diodes (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3215-3217 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The MBE growth of light emitting diodes based on junctions between n-ZnMgSe and p-ZnMgSeTe is reported. For optimized compositions of the n- and p-layer, doping levels as high as n=p=2×1018 cm−3 were obtained. The p contacts of these diodes are ohmic, and the voltage needed to achieve a given current density is comparable to that of the best ZnSe based p-n junctions reported in the literature. The diodes show green electroluminescence up to room temperature. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112416
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  • 7
    Electronic Resource
    Electronic Resource
    Molecular beam epitaxial doping of ZnMgSe using ZnCl2 (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1518-1520 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we have investigated the n-type doping properties of Zn1−xMgxSe grown by molecular beam epitaxy using a solid ZnCl2 source as dopant. We describe the effect of dopant source temperature on the carrier concentration and show that the optimum doping temperature changes with varying Mg compositions. At the same time, the highest achievable electron concentration decreases as the Mg content in the sample increases, and this behavior can be described by a model that assumes that the Fermi level is pinned 120 meV above the conduction band edge of ZnSe, in an absolute energy scale. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113632
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  • 8
    Electronic Resource
    Electronic Resource
    Doping of zinc-selenide-telluride (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2682-2684 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the doping behavior of ZnSe/ZnTe short period superlattices. p-type doping is achieved with a dc nitrogen plasma source, n-type doping with chlorine from a ZnCl2 Knudsen source. Even a small Te content has a strong positive effect on p doping: Doping levels in the upper 1019 cm−3 range are achieved, and ohmic contacts can be obtained even for low carrier concentrations. The data are in excellent agreement with a theory based on the amphoteric native defect model. The opposite is valid for n doping: At Te concentrations above 20% electron concentrations are below 1016 cm−3. As a possible way to get both good n- and p-type doping at the same lattice constant we propose the use of the quaternary compound Zn(1−y)Mg(y)Se(1−x)Te(x).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111490
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  • 9
    Electronic Resource
    Electronic Resource
    New Aspects of the Mode of Action of Nonsteroid Anti-Inflammatory Drugs (1974)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Pharmacology 14 (1974), S. 57-73 
    Details
    ISSN: 0362-1642
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Medicine , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.pa.14.040174.000421
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  • 10
    Electronic Resource
    Electronic Resource
    Hydration and protein substates: Fluorescence of proteins in reverse micelles
    Amsterdam : Elsevier
    Journal of Molecular Liquids 45 (1990), S. 253-272 
    Details
    ISSN: 0167-7322
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0167-7322(90)80034-H
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