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  • 1
    Electronic Resource
    Electronic Resource
    Technique to suppress dislocation formation during high-dose oxygen implantation of Si (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1892-1894 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Damage accumulation during high-dose oxygen implantation of Si to form a silicon-on-insulator material can deleteriously affect the quality of the material. In particular, dislocations formed in the superficial silicon layer are difficult to anneal, requiring temperatures near the melting point of Si to reduce their density to acceptable levels. A technique to suppress the formation of these dislocations during irradiation is presented. The success of this technique lies in its ability to interact with vacancy-type defects within the superficial layer whose accumulation precedes dislocation formation. A Si+ self-ion beam is used as a spatially specific tool to introduce Si atoms into the vicinity of these precursor defects prior to the onset of dislocation growth. The interaction of this beam with the precursor defects is shown to be effective in suppressing dislocation formation during subsequent O+ implantation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113312
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  • 2
    Electronic Resource
    Electronic Resource
    Damage accumulation during high-dose, O+ implantation in Si (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 896-898 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-dose O+ implantation of Si between 450 and 500 keV is investigated to better understand the mechanisms responsible for ion-induced growth of damage, especially in the top Si layer ahead of the region where a buried oxide forms. Two distinct states are identified in this Si layer over an extended range of fluence (≥1018 cm−2): a low-density defect state and a high-density one. These states are observed at all irradiation temperatures, including ambient temperature. The transition between the states is rather abrupt with the onset at a high fluence, which decreases with decreasing temperature. The existence of the low-density state offers a possibility of forming dislocation-free silicon-on-insulator wafers, even for ambient temperature irradiations. A processing method for achieving such wafers is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109894
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  • 3
    Electronic Resource
    Electronic Resource
    Strain relief mechanism for damage growth during high-dose, O+ implantation of Si (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3580-3582 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion-induced damage accumulation and growth during separation by implantation of oxygen (SIMOX) processing were studied. Silicon wafers were implanted with 450 keV oxygen ions at an elevated temperature with doses of 0.8×1018 and 1.1×1018 cm−2. At the lower dose, the silicon overlayer was found to be highly strained but free of dislocations, while a distinct band of dislocations was observed in the top Si layer at the higher dose. The occurrence of this band is shown to correlate with strain relief in the overlayer. Rutherford backscattering spectrometry, cross-section transmission electron microscopy, and x-ray diffraction were used to characterize this damage so that its role in releasing the accumulated strain during ion implantation could be better understood. Additional insight was gained into the nature of the damage formed at the different doses by studying the thermal stability at 900 °C. Markedly different thermal behaviors were observed and are correlated to changes in the strain state of each sample. These results strongly suggest that dislocation formation in the Si overlayer during the SIMOX process is in response to strain accumulation in the lattice and that dislocation-free layers can be formed by appropriate intervention prior to the yield point. This mechanism for dislocation formation is thought to be generally operative under extreme irradiation conditions and, therefore, will be important to other ion-beam synthesis processes such as buried silicide formation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110103
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  • 4
    Electronic Resource
    Electronic Resource
    The icosahedral to crystalline transformation in Al51Cu12.5Li16.5Mg20 melt-spun ribbons (1993)
    Springer
    Journal of materials science 28 (1993), S. 3731-3740 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The results of experiments on the icosahedral to crystalline transformation of melt-spun Al51Cu12.5Li16.5Mg20 are reported. The microstructural characteristics of the alloy, in all stages of the transformation, have been determined using a combination of transmission electron microscopy, X-ray diffraction and differential scanning calorimetry. The as-spun alloy consists of icosahedral grains with a low volume fraction of quenched-in crystallites. The quasilattice constant is calculated to be 0.505 nm. Upon annealing at 394 °C for 20 min, the icosahedral phase completely transforms to Al5Cu(Li, Mg)3 (a b c c phase), aluminium and a hexagonal phase. The orientation relationships and chemical compositions of all phases involved are established. Electron microscopy reveals planar defects in all the crystalline phases (except aluminium). The planar defects in the b c c phase are on {1 1 0} and {1 0 0}-type planes. Defects in the hexagonal phase are found to be on {0001} and {11 ¯20}-type planes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00353171
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