Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Analysis and optimization of quantum-well thickness for GaAs/AlGaAs and InGaAs/GaAs/AlGaAs quantum-well lasers (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5047-5054 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The gain-current coefficient and current density at transparency of GaAs/AlGaAs and InGaAs/GaAs/AlGaAs quantum-well (QW) laser structures have been calculated as a function of the QW thickness by a straightforward numerical calculation. The optimum QW thicknesses are determined to be 100 and 105 A(ring) for typical GaAs/AlGaAs and InGaAs/GaAs/AlGaAs QW laser structures, respectively, using the widely accepted semilogarithmic expression for threshold current density of QW lasers. These calculated optimum QW thicknesses agree with the reported experimental data very well. The reduction of the laser threshold current density as a result of using the optimum QW thickness is estimated to be 15% typically.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352033
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Analysis and optimization of graded-index separate-confinement heterostructure waveguides for quantum well lasers (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2857-2861 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Waveguide structures for quantum well (QW) lasers are analyzed numerically by a straightforward 2×2 matrix approach. It is shown that this approach is capable of analyzing separate-confinement heterostructure (SCH) waveguides, having any arbitrarily graded-index (GRIN) profile in the waveguide layers and any number of QWs in the active layer, to any desired level of accuracy. Using this waveguide analysis, general GRIN-SCH waveguide structures of QW lasers can be optimized for maximum confinement factors. It is estimated that the laser threshold current density can be reduced typically by 10% as a result of this waveguide optimization.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348593
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Sputtered SiNx film for self-aligned Si-Zn diffusion into GaAs and AlGaAs (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6244-6246 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new technology for self-aligned Si-Zn diffusion into GaAs and AlGaAs is described. In this technology, closed-tube Si diffusion is obtained from a sputtered SiNx film, and Zn diffusion self-aligned to the Si diffusion window is obtained by reusing the SiNx film as the mask. The key to a successful self-aligned Si-Zn diffusion is that the SiNx film is controlled to have a proper refractive index profile. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359155
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Self-aligned Si-Zn diffusion into GaAs and AlGaAs (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1855-1858 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A practical technology for self-aligned Si-Zn diffusion into GaAs and AlGaAs has been developed. It is found that the use of a Si film alone for self-aligned Si-Zn diffusion is subject to serious problems of morphology degradation and doping contamination during the process of the Si diffusion. A procedure combining the use of a SiO2 film as an encapsulant with a sputtered Si film as source for Si diffusion and mask for Zn diffusion is investigated in detail. Optimum thicknesses of the Si and SiO2 films are determined to be 180 and 550 A(ring), respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341761
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Behavior of SiNx films as masks for Zn diffusion (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 828-831 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The detailed behavior of SiNx films as masks for Zn diffusion into GaAs at both low and high temperatures has been investigated. It is found that the film behavior as a mask is a function of the refractive index of the SiNx mask film and that a film with index n=2.06 shows optimum performance at both 650 and 950 °C. The experimental results suggest that the film with n=2.06 is nearly stoichiometric. Possible reasons for this optimized masking behavior are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339714
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Low-threshold InGaAs/GaAs/AlGaAs quantum-well laser with an intracavity optical modulator by impurity-induced disordering (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 556-558 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel InGaAs/GaAs/AlGaAs QW laser with an intracavity optical modulator has been fabricated by impurity-induced disordering. Both the active and the passive sections of the device were built along an identical waveguide created by Si diffusion. The electrical isolation between the emitter and the modulator was increased by an order of magnitude by making the Zn diffusion selective in the longitudinal direction while self-aligned in the lateral direction. The typical device has a pulsed threshold of Ith=23 mA with zero bias on the modulator and an on–off ratio of 32:1 with a biasing swing of 1.8 V for normally-on operation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108909
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Laterally injected low-threshold lasers by impurity-induced disordering (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3375-3377 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Novel laterally injected lasers were fabricated by impurity-induced disordering (IID). The laterally injected IID (LID) lasers have a self-aligned structure and planar configuration; its processing procedures are almost identical to that used for our recently reported vertically injected IID lasers, and are considerably simpler than those of any other laterally injected laser yet reported. The LID lasers have a minimum threshold current Ith=3.2 mA (typical Ith=4 mA) and a maximum light output 11 mW, with a differential quantum efficiency ηd=32% per facet under room-temperature continuous-wave operation. The LID lasers can also be injected vertically by deliberately using an n+-doped (instead of semi-insulating) GaAs substrate and making additional ohmic contacts on the bottom surface of the wafer. A number of interesting aspects about the LID lasers were revealed by comparing the L-I characteristics of the laser under different injection modes, and by studying the I-V characteristics of different combinations of the top and bottom ohmic contacts.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105679
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    High-power mode-locked semiconductor lasers using flared waveguides (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3558-3560 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe the use of flared waveguide diode lasers for obtaining increased output power under mode-locked operation. The flared waveguide expands the optical mode from a narrow region which gives a single lateral optical mode, to a wider multimode region for higher pulse saturation energy. Flared gain and flared absorber section geometry devices are compared to devices with conventional uniform waveguides. Using flared gain section devices, improvements in both pulse energy (6.8 pJ) and pulsewidth (3.3 ps) were measured compared to uniform waveguide devices. Peak powers of over 2 W are obtained, which, to our knowledge, is the highest peak power obtained directly from mode-locked single stripe diode lasers. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113786
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Low-threshold high-efficiency high-yield impurity-induced layer disordering laser by self-aligned Si-Zn diffusion (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2534-2536 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Stripe geometry lasers defined by impurity-induced layer disordering (IILD) have been fabricated utilizing a novel technology of self-aligned Si-Zn diffusion from which both optical and electrical confinements are obtained simultaneously. The fabrication process is considerably simpler than that for the conventional IILD lasers and the parasitic p-n junction area in the laser structures is minimized. Typical lasers with threshold current Ith=5.2 mA and differential quantum efficiency ηd=81% at room-temperature continuous operation as well as highly uniform yield (approximately-greater-than)80% have been obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103847
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...