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  • 1
    Electronic Resource
    Electronic Resource
    Evaluating the effects of optical and carrier losses in etched-post vertical cavity lasers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5871-5875 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate the combined effects of optical scattering loss and surface recombination (or carrier diffusion) on the performance and scalability of etched-post vertical cavity lasers (VCLs). The size dependence of optical losses and threshold gain are determined from pulsed measurements of external quantum efficiency. Deeper etch depths result in a stronger radial dependence of the threshold gain, which quickly increases the threshold current density. With optical loss accounted for, pulsed threshold current density measurements give the extra information needed for evaluating carrier loss. Surface recombination or carrier diffusion also results in threshold current density increases, but scalability is ultimately limited by the ability of the active region to provide enough gain for smaller size, higher optical loss devices. Even with these losses, three-quantum-well VCLs with shallow etches have threshold currents as low as 420 μA. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360588
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  • 2
    Electronic Resource
    Electronic Resource
    Lateral carrier diffusion and surface recombination in InGaAs/AlGaAs quantum-well ridge-waveguide lasers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4479-4487 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We measured the increase in threshold currents due to lateral carrier diffusion in InGaAs/AlGaAs quantum-well ridge-waveguide laser diodes. The ridge stripes were fabricated by using both in situ monitored pure Cl2 reactive ion etching and selective wet etching to completely eliminate the spreading current in the conductive upper cladding layer while keeping the ridge sidewalls straight. After comparing the threshold data with a theoretical model, the ambipolar diffusion coefficient is found to be 22 cm2/s in the population-inverted InGaAs layer. This model is based on the calculated optical gain curve and the ambipolar carrier transport in the quantum-well and waveguiding layers. The dependence of carrier lifetime on the local carrier concentration is included in the calculation. Moreover, from another set of devices with the portions of the active layer outside the ridge stripes etched away, the surface recombination velocity is found to be around 1–2×105 cm/s.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357279
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  • 3
    Electronic Resource
    Electronic Resource
    High-efficiency and low-threshold InGaAs/AlGaAs quantum-well lasers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3932-3934 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-efficiency and low-threshold InGaAs/AlGaAs quantum-well laser structures have been grown by molecular beam epitaxy. Material characterization was performed on polyimide-planarized ridge-waveguide lasers. The measured material gain data are compared to theoretical calculations that include the valence-band mixing effects. Total injection current densities of 84 and 60 A/cm2 have been measured from 50-μm-wide laser diodes with cavity lengths of 2850 μm (from a double-quantum-well sample) and 1770 μm (from a single-well sample), respectively. Moreover, we have also obtained a cw threshold current as low as 2.1 mA from a 1.7-μm-wide and 140-μm-long as-cleaved ridge-waveguide device. In addition, the lateral current leakage for the double-quantum-well sample is found to be twice that of the single-well one.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357408
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  • 4
    Electronic Resource
    Electronic Resource
    Self-aligned Si-Zn diffusion into GaAs and AlGaAs (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1855-1858 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A practical technology for self-aligned Si-Zn diffusion into GaAs and AlGaAs has been developed. It is found that the use of a Si film alone for self-aligned Si-Zn diffusion is subject to serious problems of morphology degradation and doping contamination during the process of the Si diffusion. A procedure combining the use of a SiO2 film as an encapsulant with a sputtered Si film as source for Si diffusion and mask for Zn diffusion is investigated in detail. Optimum thicknesses of the Si and SiO2 films are determined to be 180 and 550 A(ring), respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341761
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  • 5
    Electronic Resource
    Electronic Resource
    Simultaneous gain and phase-shift enhancements in periodic gain structures (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4387-4389 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The recently proposed concept of periodic gain, i.e., dividing the active region into segments placed at optical electric-field standing wave maxima, has been shown to greatly reduce the threshold gain requirement of the active media by up to a factor of 2 in high-finesse vertical cavity surface-emitting lasers. The lasing wavelength is determined by the period of the standing wave; however, previous analyses of these structures have failed to show that a similar enhancement effect occurs for the index shift resulting from the active segments as well. In this communication, we show that effects on both gain and index can be rigorously derived from conventional transmission scattering theory.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344912
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  • 6
    Electronic Resource
    Electronic Resource
    Generation of picosecond pulses with a gain-switched GaAs surface-emitting laser (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 963-965 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pulses shorter than 4 ps (deconvolved) have been obtained by optically gain switching a GaAs multiple quantum well vertical-cavity surface-emitting laser with a picosecond dye laser. Pulse width and relative peak delay were measured as a function of pump power. A theoretical model of the large signal response agrees well with the measured data. The model predicts the minimum achievable pulse width and pulse delay for this device structure. Experimental results and calculated values indicate that very high modulation rates are possible with vertical-cavity surface-emitting lasers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103526
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  • 7
    Electronic Resource
    Electronic Resource
    High-efficiency TEM00 continuous-wave (Al,Ga)As epitaxial surface-emitting lasers and effect of half-wave periodic gain (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1209-1211 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report room-temperature, continuous-wave (cw), photopumped operation of (Al,Ga)As surface-emitting lasers grown by molecular beam epitaxy. These monolithic semiconductor lasers comprise two multilayer semiconductor mirrors surrounding a layered active region. In the active region, GaAs quantum wells are spaced with half-wave periodicity to center on standing-wave maxima of the cavity optical field. By comparing threshold data for different lasers grown with and without half-wave periodicity, we observe the first experimental evidence for reduced cw lasing threshold (as low as 2×104 W/cm2 ) with periodic gain in an epitaxial surface-emitting laser. Up to 50 mW with high efficiency (35% total, 80% differential) and narrow spectral linewidth (2 A(ring)) have been measured. A very high quality beam with low divergence (2.5°) and circular TEM00 profile has been observed. All of these observations represent significant advances for surface-emitting laser technology.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100717
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  • 8
    Electronic Resource
    Electronic Resource
    Real-time technique for the characterization of tunable single-frequency lasers (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 2217-2219 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An all-fiber Mach–Zehnder interferometric system has been developed for characterization of tunable semiconductor lasers. The tuning rate, range, and linearity of directly frequency-modulated lasers as well as laser linewidth are measured using the same system. To investigate the features of the system and demonstrate its usefulness, 1.3 μm coupled-cavity lasers, tunable with constant amplitude, were characterized. The effects of optical feedback on laser parameters have also been investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99536
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  • 9
    Electronic Resource
    Electronic Resource
    Theoretical gain in strained InGaAs/AlGaAs quantum wells including valence-band mixing effects (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2835-2837 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, we present the first detailed theoretical study of gain in strained InGaAs/AlGaAs quantum wells, taking into account the complex nature of the valence-subband structure, which must be included in any realistic model. We first compare the material gain as a function of carrier and radiative current density for a strained and unstrained quantum well. We then present calculations of theoretical differential gain, carrier density, and radiative current density at transparency as a function of indium mole fraction in the well.〈lz〉 〈lz〉 〈lz〉
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103757
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  • 10
    Electronic Resource
    Electronic Resource
    Actively mode-locked GaInAsP laser with subpicosecond output (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 348-350 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We actively mode lock a high-frequency GaInAsP laser at a rate of 16 GHz to obtain nearly transform-limited hyperbolic secant pulses with a pulse width of 0.58 ps. This is the shortest pulse width yet demonstrated for either passively or actively mode-locked semiconductor lasers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99460
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