Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
63 (1988), S. 930-933
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
An experimental study of the fundamental limits to current density, power, and speed of light-activated semiconductor switches (LASS) is described. The LASS investigated are high-voltage silicon junction devices illuminated with 1.06-μm laser light. A novel optical delay line is designed in sampling the laser pulses. Experimental results to date demonstrated a switch power of 6.7 MW, a peak electrical pulse power of 4.8 kW, a current density of 150 kA/cm2, a power density of 5.3 GW/cm3, and an electrical pulse rise time of 100 ps. The results of theoretical analysis indicate that the circuit configuration is the main limitation to the pulse rise time.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.340035
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