Electronic Resource
Springer
Czechoslovak journal of physics
23 (1973), S. 391-397
ISSN:
1572-9486
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract The formation of thin dielectric SiO2 films on n-type GaAs substrates and obtained results on the investigation of their physical and chemical parameters are described. The SiO2 films are produced by low-temperature deposition of tetraethoxisilane in the continuous flow system with argon as a carrier gas. Some of the technological aspects of this preparation (as the growth conditions and proper apparatus) are discussed in great detail. For improvement of some typical parameters (infrared spectra, etch rate and permitivity) a suitable thermal treatment is recommended. From the results we have achieved, the potential possibilities for construction of various types of electronic devices are also proposed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01587293
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