ISSN:
1432-0630
Keywords:
71.55.−i
;
73.40Gk
;
77.50.+p
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Recently developed method of transient tunneling spectroscopy (TTS) is applied to investigate the tunneling dynamics of electrons from phosphorus atoms to the silicon conduction band. In contrast to the conventional constant-current spectroscopic tunneling techniques, in TTS one monitors the evolution of the tunneling process in time. Various difficulties, which may be encountered in the measurements of the tunneling time by TTS, are discussed and illustrated. The temperature dependence of the tunneling time for an isolated phosphorus atom is presented, and possible mechanisms responsible for the decrease of the tunneling time with the lattice temperature T, at T⩾15 K, are discussed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00323679
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