Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
90 (2001), S. 5973-5978
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report the chemical stability of the hybrid Fe/ZnSe/GaAs heterostructure prepared by molecular-beam epitaxy. Analyses of photoemission spectra show a remarkable chemical stability of the Fe/ZnSe(001) interface up to 380 °C, where the effective disruption of the heterostructure occurs, together with the appearance of Ga atoms near the film surface. This suggests that the ZnSe/GaAs interface is surprisingly less stable than the Fe/ZnSe one. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1416142
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