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  • 1
    Electronic Resource
    Electronic Resource
    Excitonic behavior in pseudomorphic InGaAs/(Al,Ga)As quantum wells grown by molecular-beam epitaxy (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 2746-2749 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence and photoluminescence excitation spectroscopy have been used to study excitons in undoped InGaAs pseudomorphic quantum wells with GaAs and AlGaAs barrier layers. Luminescence features from samples incorporating a top AlGaAs barrier layer were strikingly different from those with bottom AlGaAs barriers. The 2-K luminescence from the latter structures showed free and bound exciton contributions with a linewidth ≤1.5 meV. In contrast, the luminescence from samples with top AlGaAs barriers was much broader, presumably the result of statistical variations in well width due to island formation at the top interface. Fits to the temperature dependence of the PL linewidth show that while the homogeneous broadening is similar in all the structures, the inhomogeneous broadening introduced by the interfaces is fundamentally different. The results could have important implications for the optimization of heterostructure devices in this pseudomorphic system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344196
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    AlGaAs doping superlattices grown by molecular beam epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1883-1885 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AlGaAs doping superlattices ("nipi structures'') have been successfully grown in 30% AlGaAs by molecular beam epitaxy. Tunable photoluminescence (PL) as a function of incident laser intensity has been observed in samples with a wide range of intrinsic layer thicknesses over a temperature range from 2 to 120 K. Luminescence shifts as large as 230 meV were observed for a range of incident intensities of about 500. Low-temperature PL spectra showed a weaker dependence of the peak energy on incident intensity for thicker spacer layers. This decrease in tuning rate can be associated with the reduced probability for tunneling transitions with increasing spacer thickness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99613
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    GaAs light-emitting diodes with n-i-p-i active layers fabricated by selective contact diffusion (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 125-127 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs/AlGaAs light-emitting diodes (LED's) with nipi active regions have been successfully fabricated using sequential n and p diffusions to selectively contact the doping superlattice. By doing sequential patterned sulfur and zinc diffusions, a lateral injection LED can be readily fabricated. Excellent current-voltage characteristics were achieved with reverse breakdown voltages in excess of 9.5 V, indicating that the selective contacts were nearly optimum. cw outputs of 500 μW at 50 mA drive current have been observed. The LED output spectrum was seen to tune with applied bias at a rate of about 650 meV/V at low temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100419
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    Paper (German National Licenses)
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