Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
69 (1996), S. 2876-2878
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
CdTe(1¯ 1¯ 3¯)B epilayers were grown on Si substrates oriented (112)5° off toward the [1¯ 1¯ 1] direction by molecular beam epitaxy (MBE). A Zn irradiation process was developed in order to obtain a (1¯ 1¯ 3¯)B face. HgCdTe(1¯ 1¯ 3¯)B epilayers were grown on 20 μm-thick CdTe/Si(112) 5° off, and characterized. These layers have double-crystal x-ray rocking curves with full width at half-maximum as low as 64 arc s, and etch pit densities of 4.4×106 cm−2 and 2.6×105 cm−2 for as-grown and thermal-cycle annealed films, respectively. Photodiodes were also fabricated to demonstrate the capability of large-area MBE-HgCdTe/Si focal-plane arrays. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.117348
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