ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
p-type GaAs with doping levels of up to 5.8×1020 cm−3 has been grown by metalorganic molecular-beam epitaxy (MOMBE) using carbon (C) as a dopant. The mobility and minority-carrier diffusion length of the C-doped MOMBE layers were comparable to those of Be-doped MBE layers. The diffusion coefficient of C at 900 °C was estimated to be 6×10−15 cm2 /s which is about two orders of magnitude less than that of Be (1×10−12 cm2 /s). In addition, the lattice constant of C-doped GaAs was found to be 5.6533 A(ring) which completely matches that of the substrate, while the lattice constant of Be-doped GaAs decreases to 5.6467 A(ring) at a doping level of 2×1020 cm−3 as reported by Lievin et al. [Inst. Phys. Conf. Ser. No. 79, 595 (1985)].
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.341356
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