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  • 1
    Digitale Medien
    Digitale Medien
    s.l. : American Chemical Society
    Industrial & engineering chemistry 48 (1956), S. 142-146 
    ISSN: 1520-5045
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie , Werkstoffwissenschaften, Fertigungsverfahren, Fertigung
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    s.l. : American Chemical Society
    Analytical chemistry 25 (1953), S. 1204-1206 
    ISSN: 1520-6882
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    Springer
    Journal of materials science 25 (1990), S. 2264-2266 
    ISSN: 1573-4803
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau
    Notizen: Abstract Temperature-induced transformations are considered to be interesting characteristic properties of amorphous materials including the Si x Te60−x As30Ge10 system, withx=5, 10, 12 and 20. Density (ϱ), X-ray diffraction and differential thermal analysis (DTA) were used to characterize the compositions. DTA traces of each glass composition at different heating rates from 5 to 30° C min−1 were obtained and interpreted. Fast and slow cooling cycles were used to determine the rate of structure formation. Cycling studies of materials show no memory effect but only ovonic switching action. The compositional dependence of the crystallization activation energy (E) and the coefficient of glass-forming tendency (K gl) have been calculated. The thermal transition temperatures and associated changes in specific heat have been examined as a function of the Te/Si ratio by differential scanning calorimetry. It was found thatϱ andE increase linearly with increasing tellurium content, while the heat capacity (c p) andK gl, decrease with increasing tellurium content.E=1.54 eV andc p=0.246 J g−1 K−1 forx=20 whileE=2.74eV andc p=0.22 J g−1 K−1 forx=5.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 4
    Digitale Medien
    Digitale Medien
    Springer
    Journal of materials science 24 (1989), S. 2444-2448 
    ISSN: 1573-4803
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau
    Notizen: Abstract The effect of composition on amorphous chalcogenide threshold switches of the system Si x Te60-x As30Ge10, wherex = 5, 10, 12 and 20, has been studied. The compositionx = 5 shows the best switching characteristics, e.g. the smallest holding voltage (V h = 0.4V), the highest ON state current (I h = 45μA) and smallest threshold voltage (V s = 1.5V). Applying the three mechanisms of conductance of Mottet al. (Phil. Mag. 37 (1975) 961), it is found that for a particular compositionσ 2 〈σ 1 〈σ 0 (the pre-exponential factors) andW 2 〈 (E a −E 1 +W 1) 〈 (E c −E f) (whereE a,E c andE e = activation energies at band edge, fermi level and conduction band;W 1 andW 2 = activation energy for hopping). It was found that the density of states at the fermi levelN(E f) increases with the decrease of silicon content. The results provided further evidence against thermal interpretations and thereby support electronic models of threshold switching for these glass systems.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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