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  • 1
    Electronic Resource
    Electronic Resource
    Photoelectronic properties of porous silicon (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1986-1988 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that the introduction of a porous structure into single-crystal Si produces substantial changes in the photoelectronic properties. The porous Si (PS) layer is formed by anodization of p-type Si wafers in a HF solution. The photoconduction cells used in this study consists of a semitransparent thin Au film, PS, Si substrate, and Al ohmic contact. The photoconductive behavior of PS is characterized by an extremely high dark resistivity, a definite photosensitivity for visible light, and an intrinsic bias voltage dependence of the spectral response. These properties, which are interpreted to be the result of a band-gap widening in PS, provide further support of the assumption that the visible luminescence of PS is explained by the band scheme.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357663
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Precisely tuned emission from porous silicon vertical optical cavity in the visible region (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4841-4844 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The operating peak energy of a porous silicon (PS) cavity can be completely controlled over a wide range of 1.5–2.2 eV, using a PS-based Fabry–Perot resonator composed of a light-emitting active PS layer and two high-reflectivity mirrors. When the PS devices are excited by a uv laser, quite narrow spectra (10–40 meV in full width at half-maximum) are observed without any significant signs of side mode. The central photon energy is precisely and continuously tuned simply by changing the anodization parameters. The key issues of the controlled device operation are adjustment of the optical thickness of the active PS layer to an appropriate value and fabrication of the quarter-wavelength multilayered PS mirror with a high reflectivity. The spectral qualities of the emitted light are also discussed by theoretical analyses on the basis of a simplified model. These results suggest that the PS devices operate as sharp band-pass optical filter and the PS materials are available for novel silicon-based microphotonics. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363526
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Optical characterization of porous silicon by synchrotron radiation reflectance spectra analyses (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2774-2776 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic structure of porous Si(PS) has been characterized by optical reflectance spectra analyses. The reflectance spectra of PS were measured in the photon energy range of 2–27 eV using a synchrotron radiation source. The reflectance at the low energy region was calibrated by the corresponding absolute value which was separately determined from spectroscopic ellipsometry. The spectral response of optical constants were calculated by the Kramers–Kronig analysis. Our results indicate that PS retains some of the characteristic optical features of crystalline Si, and that a blue shift in the absorption edge occurs in PS.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110330
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  • 4
    Electronic Resource
    Electronic Resource
    Controlled electroluminescence spectra of porous silicon diodes with a vertical optical cavity (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2956-2958 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is demonstrated that a porous silicon (PS) optical cavity is available for the electroluminescence (EL) PS diode configuration. The PS diode is composed of a thin Au film, a light-emitting PS layer, a multilayered PS mirror, a p-type Si substrate, and an ohmic contact. When a sufficient bias voltage is applied to the diode, a uniform visible light emission is observed through the top contact. The EL intensity is fairly proportional to the driving current over a wide range of operation. The bandwidth of the EL spectrum is significantly reduced in comparison to that of the conventional PS diodes, owing to a resonance effect induced between the Au film and the multilayered PS mirror. These results suggest that the PS technology is a promising process for applications in monolithic integrated optoelectronics. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117742
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Fabrication and fundamental properties of an edge-emitting device with step-index porous silicon waveguide (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2999-3000 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is demonstrated that an edge-emitting device with a waveguide structure based on luminescent porous silicon (PS) operates at wavelengths in the visible region. The PS device is composed of an upper-side cladding Al thin film, an active PS layer, and a lower-side cladding PS layer with a smaller refractive index. When excited by an Ar ion laser with a wavelength of 458 nm, the device operates as an optical waveguide and consequently visible light can be observed from the cleaved facets of the device. The emitted light is significantly polarized along the direction of the transverse-electric (TE) mode due to the metal cladding layer. These results suggest that PS is useful as a component for silicon-based photonic integration. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116676
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    Paper (German National Licenses)
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