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  • 1
    Electronic Resource
    Electronic Resource
    Electrical and optical properties of gold-doped n-type silicon (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 137-145 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Different measurement techniques, both electrical and optical, were utilized in this work to characterize gold diffusion in n-type, float-zoned silicon in the temperature range 600–1150 °C. In the lower temperature region (≤750 °C), the gold diffusion is observed by the introduction of the Au acceptor state at 0.53 eV below the conduction band, and is correlated to the electrical behavior of the samples deduced from Hall effect and resistivity data. Also, the effects of Au diffusion on the free-carrier concentration and mobilities are discussed. It was shown that high temperatures and long times for gold diffusion change the conductivity type in the samples from n to p. In the samples that converted to p type, a limiting room-temperature resistivity of 2.0×103 Ω cm was attained, when the conduction is mainly influenced by the Au-related deep electronic states in the band gap. In this case, the diffusion mechanism is also investigated by secondary ion mass spectroscopy data determining the equilibrium Au solubility, which is close to the equilibrium solubility of interstitial gold. Low-temperature photoluminescence measurements have shown that the intensity of the lines often attributed to dislocations, increases significantly by gold diffusion in the lower temperature region. At higher diffusion temperatures, a decrease of the dislocation-related lines was found, associated with formation of gold-related precipitates. Introducing an inhomogeneous internal stress distribution in the Si matrix, these precipitates cause line shifts as well as line broadenings of the free exciton, the phosphorus bound exciton, and the electron-hole droplet photoluminescence emissions. The concentration of substitutional phosphorus is found to decrease with increasing diffusion temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342587
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  • 2
    Electronic Resource
    Electronic Resource
    A study of iron-related centers in heavily boron-doped silicon by deep-level transient spectroscopy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6306-6310 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep levels in iron-diffused heavily boron-doped silicon are investigated by means of deep-level transient spectroscopy (DLTS). For interstitial iron Fei a donor state is observed at 0.39 eV above the top of the valence band Ev. It is proposed that Fei exhibits charge-dependent annealing characteristics, and in its neutral charge state Fei is mobile at temperatures as low as ≈280–230 K. Three other Fe-related donor states are observed at Ev+0.53 eV, Ev+0.60 eV, and ≈Ev+0.63 eV. The latter two states, not reported in any previous DLTS study, are produced in comparable concentrations to that of Fei upon annealing at 100 °C, whereas the former state present directly after quenching is suggested to result from a complex defect containing Fei. It is also argued that the level observed in this study at Ev+0.60 eV is the same as the one reported earlier at 0.55 eV below the bottom of the conduction band, but that it corresponds to a donor state of an Fe-related defect, in contrast to previous suggestions of it being an acceptor state. The annealing behavior of the defect states observed is studied up to 300 °C, and possible interactions involving Fei are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342090
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  • 3
    Electronic Resource
    Electronic Resource
    Electrical properties of contact etched p-Si: A comparison between magnetically enhanced and conventional reactive ion etching (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2270-2278 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the results of a comparative study of the damage induced in boron-doped Si by contact etching. The two approaches compared are conventional reactive ion etching and magnetically enhanced reactive ion etching (MERIE). The two structure-chemistry combinations used are SiO2/Si with CHF3/O2 plasmas, and bare Si wafers with CHF3/Ar plasmas. The damage examined in the Si substrates of both structures is that of electronic states in the band gap, the permeation into Si of hydrogen, and the deactivation of boron acceptors. These types of damage are explored by means of deep level transient spectroscopy and capacitance-voltage measurements on Ti/Si Schottky diodes fabricated on the etched substrate surfaces. The gap states induced by these contact etches are ascribed to interstitial-atom-related defects which are proposed to be formed as a result of interactions involving self interstitials. During etching these defects are observed to be both generated by the etching process itself as well as electrically passivated by permeating hydrogen. The hydrogen permeation of the substrate, monitored via acceptor deactivation, is seen to be enhanced for MERIE with increasing magnetic field intensities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357647
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  • 4
    Electronic Resource
    Electronic Resource
    Plasma-charging damage to gate SiO2 and SiO2/Si interfaces in submicron n-channel transistors: Latent defects and passivation/depassivation of defects by hydrogen (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 517-525 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: New experimental results are presented which provide evidence for hydrogen passivation and depassivation of plasma-charging-induced defects in gate oxides and at oxide/silicon interfaces. The devices used in this study were 0.5 μm n-channel metal–oxide–semiconductor field-effect transistors fabricated on 200 mm boron-doped silicon substrates. The processing included Cl2/HBr-based chemistries for the polycrystalline silicon gate definition etch, and CHF3/CF4-based chemistries for the contact etch. Plasma-charging defects resulting from the processing are shown to have the following properties: (i) plasma-induced charging defects are latent (electrically inactive) directly after our processing and before postmetallization annealing (PMA); (ii) these defects continue to be latent after N2 and Ar anneals done at temperatures T in the range 200 °C≤T≤400 °C; (iii) these defects are also latent after our standard PMA done in forming gas at 400 °C; (iv) these defects are electrically activated by room-temperature Fowler–Nordheim stress, and (v) equivalently these defects are electrically activated by annealing below 400 °C in hydrogen-rich ambients. We show hydrogen passivation/depassivation is responsible for this behavior. This passivation/depassivation has been previously suggested to occur for defects at SiO2/Si interface; here it is also proposed to describe defect–hydrogen interactions in the bulk gate oxide for defects caused by plasma-charging damage. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360860
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  • 5
    Electronic Resource
    Electronic Resource
    Defect states in carbon and oxygen implanted p-type silicon (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 270-275 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The presence of electrically active defects in C+ and CO+ implanted boron-doped silicon has been monitored using deep level transient spectroscopy and resistivity measurements. Activation energies of trapped carriers, implanted ion dependencies, and annealing behavior of these defects have been determined. The introduction of defects by annealing has been observed. A total of ten hole and electron traps are reported. Among these traps, a dominant hole trap 0.65 eV above the valence band, and an electron trap 0.53 eV below the conduction band, are tentatively ascribed to the silicon di-interstitial and the carbon-oxygen pair, respectively. Other traps detected in the samples have been correlated with multi-oxygen- and carbon-related complexes. Annealing at temperatures up to 400 °C gives rise to similar deep level transient spectroscopy spectra comprising the same traps in both C+ and CO+ implanted material. However , annealing at temperatures 〉500 °C produces defect states that are dependent on the implanted ion species.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345247
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  • 6
    Electronic Resource
    Electronic Resource
    Electrical studies on plasma and reactive-ion-etched silicon (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5388-5393 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of reactive-ion etching (RIE) and plasma etching (PE) using deuterium on the electrical properties of boron-doped p-type silicon has been studied employing junction capacitance measurements on Schottky diodes. Deep-level transient spectroscopy (DLTS) measurements on the treated samples revealed the presence of a number of previously unreported near-surface traps. These comprise hole traps H(0.44) and H(0.54) at 0.44 and 0.54 eV above the valence band, respectively, and an electron trap E(0.46) at 0.46 eV below the conduction band. The H(0.44) observed directly after the RIE treatment increases in concentration as the sample is annealed to 200 °C, whereas the E(0.46) and H(0.54) are detected in the PE samples directly after etching and annealing at 100 °C, respectively. The depth profiles of the observed traps have been determined, and their annealing behavior is studied up to 200 °C. E(0.46) and H(0.54) are tentatively associated with strain-induced defects resulting from hydrogen platelet formation, whereas H(0.44) is attributed to a vacancy-related defect complex. Other broader DLTS signals following annealing ≥200 °C are explained in terms of additional trap levels closely positioned in the band gap and/or extended defect clusters. Also, the capacitance-voltage (C-V) data on the diodes were modeled to extract the boron deactivation depth profile of the samples after plasma exposures and upon annealing at 200 °C. For both RIE and PE, annealing at 200 °C for 60 min caused the shallow boron acceptor concentration in the samples to almost recover to its preetched value.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343683
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  • 7
    Electronic Resource
    Electronic Resource
    Radiation-induced defect states in low to moderately boron-doped silicon (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6301-6305 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low to moderately boron-doped silicon crystals were irradiated at room temperature with a 2.0-MeV electron beam and studied by means of deep-level transient spectroscopy. New dominant hole traps H(0.12) and H(0.07) located, respectively, at 0.12 and 0.07 eV above the valence band, and an electron trap E(0.59) located at 0.59 eV below the conduction band are reported. The states H(0.12), produced directly after irradiation, and H(0.07), formed following 400 °C annealing, are observed in samples of low boron contents (∼1014 cm−3). The state E(0.59), on the other hand, is observed after 400 °C annealing in the moderately boron-doped samples (∼1015 cm−3). Based on the thermal stability and energy position of these states tentative defect identifications are proposed by correlation with published data. Other previously reported hole traps are observed at 0.22 and 0.34 eV above the valence band and are ascribed to the divacancy V2 (0/+) and the carbon interstitial-carbon substitutional pair, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342089
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  • 8
    Electronic Resource
    Electronic Resource
    Deep-level transient spectroscopy and photoluminescence studies of electron-irradiated Czochralski silicon (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1974-1979 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Isothermal annealing of electron-irradiated Czochralski silicon samples (n-type) has been performed at 335 °C. The annealing process was studied using deep-level transient spectroscopy (DLTS) and photoluminescence (PL). The dominating level in the DLTS spectra directly after irradiation is located ∼0.18 eV below the conduction band and has previously been assigned to a vacancy-oxygen center by other authors. During the anneal the concentration of vacancy-oxygen centers decreases, and simultaneously a new level, ∼0.20 eV below the conduction band, grows up. It is shown that the defect giving rise to this new level may be vacancy related. The PL spectra directly after irradiation are dominated by the G line (969 meV) and the C line (790 meV). The G line disappears rapidly, while the C line is still present after 320 min at 335 °C. During the heat treatment some new lines appear, e.g., the P line (767 meV) and a line at 950 meV. Based on the annealing kinetics, it is speculated that the 950-meV defect may be vacancy related.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337198
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  • 9
    Electronic Resource
    Electronic Resource
    Defect states in 2.0-MeV electron-irradiated phosphorus-doped silicon (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4779-4788 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Float-zoned n-type silicon samples with phosphorus concentrations in the range 1014–1017 P atoms cm−3 have been irradiated by 2-MeV electrons at room temperature with the aim of studying the role of phosphorus in the resulting damage. Using deep-level transient spectroscopy we were able to observe a number of previously unreported deep traps. A major post-irradiation bistable defect center detected in highly P-doped (∼1017 cm−3) material has an electron trap at Ec−0.42 eV, and a hole trap at Ev+0.15 eV (Ec and Ev are the conduction- and valence-band edges, respectively), each of which is associated with one of the two configurations of the center. The center, alternating between being acceptorlike to being donorlike as it undergoes configurational transformation, is suggested to be P related. Two metastable electron traps located at Ec−0.32 eV and Ec−0.42 eV are observed immediately after irradiation in moderately P-doped samples (∼1015–1016 cm−3). Interestingly, the configurational transformation rates of these states are observed to be dependent on the magnitude of the bias applied to the diode during cooldown to LN2 temperature. This is taken to indicate that configurational transformations, often thermally activated, can in some cases be influenced by the electric field strength within the depletion region. Upon thermal annealing at 200 °C of the latter two states, a couple of new states emerge; an electron trap at Ec−0.42 eV, stable up to temperatures above 300 °C, and a hole trap at Ev+0.25 eV which anneals out at 300 °C. An electron trap situated at Ec−0.24 eV with a quite small capture cross section for electrons is seen in lightly P-doped material (∼1014 cm−3) following annealing at 300 °C. Tentative propositions for the defect assignments of the observed traps are put forward.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343232
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  • 10
    Electronic Resource
    Electronic Resource
    Observation of a new type of plasma etching damage: Damage to N-channel transistors arising from inductive metal loops (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1690-1692 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a new type of damage, referred to here as inductive damage, induced by metal 1 plasma etching. The devices used in this study are lightly doped drain n-channel metal–oxide semiconductor field effect transistors (MOSFETs) fabricated on 200 mm p/p+ silicon wafers. The channel lengths of the investigated transistors are 0.5 μm with 90 A(ring) thick thermally grown gate oxides. The metal 1 main etch (duration 30 s) and overetch (50%) employed BCl3/N2/Cl2 chemistry and was done using a standard reactive ion etching tool operated at rf power of 600 W and rf frequency of 13.56 MHz. Specially designed MOSFETs with inductive metal loops connecting the gate and substrate or the gate and drain are used to examine inductive damage. Inductive damage is shown to arise from electrical stress of the gate oxide and oxide/Si interface by the electromotive force generated in the metal loops by the metal plasma etch. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115907
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