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  • 1
    Electronic Resource
    Electronic Resource
    Mechanism of decomposition of cuprous cyanide. Infrared and thermal evidence (1993)
    s.l. : American Chemical Society
    Chemistry of materials 5 (1993), S. 1283-1286 
    Details
    ISSN: 1520-5002
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/cm00033a017
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  • 2
    Electronic Resource
    Electronic Resource
    Interaction of Iron Donor with Transition-Metal Impurities in Silicon (1995)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 196-201 (Nov. 1995), p. 689-694 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/01/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.196-201.689.pdf
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  • 3
    Electronic Resource
    Electronic Resource
    A new method for solid surface topographical studies using nematic liquid crystals (1984)
    Springer
    Applied physics 33 (1984), S. 209-211 
    Details
    ISSN: 1432-0630
    Keywords: 61.30 ; 68.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A new simple method has been developed to investigate the topography of a wide range of solid surfaces using nematic liquid crystals. Polarizing microscopy is employed. The usefulness of the method for detecting weak mechanical effects has been demonstrated. An application in criminology is foreseen.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618758
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  • 4
    Electronic Resource
    Electronic Resource
    Once daily propranolol in the treatment of mild to moderate hypertension (1978)
    Springer
    European journal of clinical pharmacology 14 (1978), S. 163-166 
    Details
    ISSN: 1432-1041
    Keywords: Propranolol ; hypertension
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Medicine
    Notes: Summary Propranolol was administered in a single dose of 80 mg, 120 mg, 160 mg, 240 mg, or 320 mg, to 23 patients with essential mild to moderate hypertension in a randomised, double-blind cross-over study. All treatments produced a significant fall in lying and standing blood pressures compared with placebo, but there was no statistically significant difference in the effects of the different doses. The percentage of patients showing a satisfactory fall in blood pressure was not different in the five treatment groups. The major anti-hypertensive effect of each dose was present by two weeks. The frequency of side-effects were similar on all the doses.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02089954
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  • 5
    Electronic Resource
    Electronic Resource
    The use of long-acting propranolol (‘Inderal’ LA) in the management of elderly hypertensive patients (1982)
    Springer
    European journal of clinical pharmacology 22 (1982), S. 379-381 
    Details
    ISSN: 1432-1041
    Keywords: propranolol ; hypertension ; elderly patients ; long-acting propranolol
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Medicine
    Notes: Summary Fifteen elderly patients whose hypertension was controlled by conventional propranolol 80 mg twice a day had their medication changed to one capsule of ‘Inderal’ LA1 (160 mg) daily. The blood pressure, heart rate and propranolol concentrations were measured at various time points when the patients were receiving the conventional preparation and these assessments were repeated when the long-acting preparation was administered. Although the heart rate was lower with conventional propranolol than with ‘Inderal’ LA there was no significant difference in the blood pressure levels. The mean peak blood level of propranolol was, however, significantly lower with ‘Inderal’ LA compared with conventional propranolol and occurred later. At 12 h the plasma propranolol levels were higher after ‘Inderal’ LA than following the intake of conventional propranolol (p〈0.01); there was no difference in the plasma levels at 24 h. The area under the concentration time curve was significantly higher on conventional propranolol. Compared with published data, the plasma levels were higher than those in younger patients. ‘Inderal’ LA was well tolerated and side effects were minimal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00542538
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  • 6
    Electronic Resource
    Electronic Resource
    Influence of Al Doping on Deep Levels in MBE GaAs (1995)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 196-201 (Nov. 1995), p. 1767-1772 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/01/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.196-201.1767.pdf
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  • 7
    Electronic Resource
    Electronic Resource
    Electrical characterization of inadvertent midgap levels in GaP (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3919-3922 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results of an electrical characterization study of two hitherto unobserved midgap deep levels in GaP using deep-level transient spectroscopy and single-shot dark capacitance transient techniques are reported. These are the dominant majority-carrier (electron) levels in the green-light-emitting diodes studied. Detailed electron emission rate and capture cross-section measurements are performed on these levels. The shallower of the two levels is found to have an activation energy to the conduction band varying from 0.88±0.02 eV to 0.93±0.02 eV from sample to sample while the activation energy of the deeper level is 0.96±0.02 eV. The results of the capture measurements give an upper limit of 1.2×10−19 cm2 for the electron capture cross sections of the two levels. A detailed comparison of the emission rate data with the published results on midgap levels in GaP is presented. It is proposed that one of these midgap levels may be the counterpart in GaP of the well-known EL2 level found in GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343356
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  • 8
    Electronic Resource
    Electronic Resource
    Effects of annealing and α irradiation on deep levels in silver-doped n-type silicon (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3315-3322 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep-level transient spectroscopy has been used to study the deep levels introduced by silver impurity in silicon. New levels in addition to the well-known silver-related deep donor and acceptor levels have been found. Interaction of silver-related defects with radiation-induced defects has been studied using α irradiation. Data on the annealing characteristics of silver-related levels are reported. Isochronal thermal annealing before and after irradiation provides interesting insights on such interactions and on the nature of the silver-related levels. In particular, the two newly observed prominent silver-related levels exhibit a complementary annealing behavior, suggesting a mutual thermal transformation. The presence of silver is seen to produce a significant change in the annealing characteristics of the prominent radiation-induced A-center defect. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358617
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  • 9
    Electronic Resource
    Electronic Resource
    Study of the alpha irradiation and thermal annealing of gold-doped n-type silicon (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5572-5579 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep level transient spectroscopy has been used to investigate the effects of alpha irradiation and thermal annealing on deep levels in gold-doped n-type silicon. Data on thermal annealing characteristics of the well-known gold acceptor up to temperatures as high as about 600 °C are reported. This level is found to be very stable, supporting the substitutional gold model for the acceptor center. Interaction of the gold-related defects with radiation-induced defects has been investigated using 5.48 MeV alpha particles for irradiation, combined with isochronal thermal annealing before and after irradiation. Irradiation produces the usual radiation-induced levels. A slight reduction in the gold-acceptor concentration is observed due to irradiation, contrary to an earlier reported study. A noticeable suppression of the thermal stability of this level is also observed after irradiation. The presence of gold leads to a significant enhancement of the anneal-out temperature of the well-known A-center defect. A deep level at Ec−0.34 eV, ascribed to the Fe–Au complex, is found to be enhanced by irradiation. No evidence is found to support the recently proposed gold-divacancy complex model of the gold acceptor—rather, the results strongly support the isolated substitutional impurity model for this center. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359198
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  • 10
    Electronic Resource
    Electronic Resource
    Study of deep levels in alpha-irradiated silver-doped p-type silicon (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5050-5059 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep-level transient spectroscopy has been employed to study the defects in silver-doped p-type Si, their interaction with radiation-induced defects, and the thermal annealing characteristics of both types of defects. The linearly graded nature of the n+p junctions used allows the acceptor (Ec−0.54 eV) and donor (Ev+0.35 eV) levels associated with silver to be studied simultaneously. The acceptor level is found to be stable against thermal annealing performed up to ∼400 °C, while the donor level shows a decrease beyond 300 °C. Important effects related with rapid thermal quenching of samples are revealed by a comparison of the data with the corresponding data on identical virgin (unquenched) samples. Irradiation by α particles leads to interesting new insights on the interaction of silver-related defects and the radiation-induced defects. New aspects of the kinetics and formation mechanism of the carbon-related defects in Si are brought to light as a result of room-temperature isothermal annealing and isochronal annealing studies on the irradiated samples with and without silver. Irradiation also produces interesting effects on the Ag-related levels—while the acceptor level Ag(A) remains more or less stable, the donor level Ag(D) shows a small but systematic increase in concentration with α-radiation dose. These observations, together with the different annealing behaviors, suggest that the two levels due to silver are not coupled states of the same defect. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359313
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