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  • 1
    Electronic Resource
    Electronic Resource
    Dielectric relaxation of Ba0.7Sr0.3TiO3 thin films from 1 mHz to 20 GHz (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 498-500 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dielectric relaxation of Ba0.7Sr0.3TiO3 thin films was investigated up to K band (20 GHz) using time domain and frequency domain measurements. Our results show that from 1 mHz to 20 GHz, the dielectric relaxation of the complex capacitance of Ba0.7Sr0.3TiO3 thin films can be understood in terms of a power law dependence known as the Curie–von Schweidler law. The small dispersion (less than 7% decrease in capacitance from 1 mHz to 20 GHz) and low loss (loss angle less than 0.006 at 20 GHz) measured in Ba0.7Sr0.3TiO3 thin films indicate that these films are applicable to device application up to at least K band. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120796
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  • 2
    Electronic Resource
    Electronic Resource
    Hydrogen induced tunnel emission in Pt/(BaxSr1−x)Ti1+yO3+z/Pt thin film capacitors (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2873-2885 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The leakage current density–applied field (J−EA) characteristics of (BaxSr1−x)Ti1+yO3+z (BSTO) thin film capacitors with Pt electrodes that have been annealed in forming gas (95% Ar 5% H2 or D2) were investigated over the temperature range from −60 to +60 °C. Forming gas annealing significantly increased the leakage current density. The J–EA characteristics exhibited features that could not be fully explained by either a simple thermionic emission or tunneling (Fowler–Nordeim) formalism. Using the general charge transport theory of Murphy and Good, we show that the J–EA characteristics can be successfully interpreted in terms of tunneling of electrons through the interfacial Schottky barrier with the peak in energy distribution of the incident carriers strongly dependent on applied field. At high applied fields the energy distribution of incident carriers is peaked near the Fermi level in the electron injecting metal electrode at all temperatures considered in this study, leading to almost temperature independent J–EA characteristics. At lower applied fields the peak in energy distribution shifts towards the conduction band edge where thermally assisted tunneling occurs and a more pronounced temperature dependence of the current density is observed. Good agreement between experiment and theory is demonstrated for a reasonable parameter set for BSTO thin films strongly suggesting that the high leakage current density often observed after forming gas annealing results from tunneling of electrons through the interfacial Schottky barrier. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1339207
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    Paper (German National Licenses)
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