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  • 1
    Electronic Resource
    Electronic Resource
    Quantifying social group evolution (2007)
    [s.l.] : Nature Publishing Group
    Nature 446 (2007), S. 664-667 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The rich set of interactions between individuals in society results in complex community structure, capturing highly connected circles of friends, families or professional cliques in a social network. Thanks to frequent changes in the activity and communication patterns of individuals, the ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/nature05670
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  • 2
    Electronic Resource
    Electronic Resource
    Human dynamics Darwin and Einstein correspondence patterns (2005)
    [s.l.] : Nature Publishing Group
    Nature 437 (2005), S. 1251-1251 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] In an era when letters were the main means of exchanging scientific ideas and results, Charles Darwin (1809–82) and Albert Einstein (1879–1955) were notably prolific correspondents. But did their patterns of communication differ from those associated with the instant-access e-mail ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/4371251a
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  • 3
    Electronic Resource
    Electronic Resource
    Internet Diameter of the World-Wide Web (1999)
    [s.l.] : Macmillan Magazines Ltd.
    Nature 401 (1999), S. 130-131 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Despite its increasing role in communication, the World-Wide Web remains uncontrolled: any individual or institution can create a website with any number of documents and links. This unregulated growth leads to a huge and complex web, which becomes a large directed graph whose vertices are ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/43601
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  • 4
    Electronic Resource
    Electronic Resource
    Parasitic computing (2001)
    [s.l.] : Macmillian Magazines Ltd.
    Nature 412 (2001), S. 894-897 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Reliable communication on the Internet is guaranteed by a standard set of protocols, used by all computers. Here we show that these protocols can be exploited to compute with the communication infrastructure, transforming the Internet into a distributed computer in which servers unwittingly ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/35091039
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  • 5
    Electronic Resource
    Electronic Resource
    Error and attack tolerance of complex networks (2000)
    [s.l.] : Macmillian Magazines Ltd.
    Nature 406 (2000), S. 378-382 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Many complex systems display a surprising degree of tolerance against errors. For example, relatively simple organisms grow, persist and reproduce despite drastic pharmaceutical or environmental interventions, an error tolerance attributed to the robustness of the underlying metabolic ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/35019019
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  • 6
    Electronic Resource
    Electronic Resource
    Effect of surface roughness on the secondary ion yield in ion sputtering (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2209-2211 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: There is extensive experimental evidence that, at low temperatures, surface erosion by ion bombardment roughens the sputtered substrate, leading to a self-affine surface. These changes in the surface morphology also modify the secondary ion yield. Here, we calculate analytically the secondary ion yield in terms of parameters characterizing the sputtering process and the interface roughness. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122425
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  • 7
    Electronic Resource
    Electronic Resource
    Effect of surface roughness on the secondary ion yield in ion sputtering (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1445-1447 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: There is extensive experimental evidence that, at low temperatures, surface erosion by ion bombardment roughens the sputtered substrate, leading to a self-affine surface. These changes in the surface morphology also modify the secondary ion yield. Here, we calculate analytically the secondary ion yield in terms of parameters characterizing the sputtering process and the interface roughness. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122170
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  • 8
    Electronic Resource
    Electronic Resource
    Secondary ion yield changes on rippled interfaces (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 906-908 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sputter erosion often leads to the development of surface ripples. Here we investigate the effect of the ripples on the secondary ion yield, by calculating the yield as a function of the microscopic parameters characterizing the ion cascade (such as penetration depth, widths of the deposited energy distribution) and the ripples (ripple amplitude, wavelength). We find that ripples can strongly enhance the yield, with the magnitude of the effect depending on the interplay between the ion and ripple characteristics. Furthermore, we compare our predictions with existing experimental results.© 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120932
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  • 9
    Electronic Resource
    Electronic Resource
    Self-organized superlattice formation in II–IV and III–V semiconductors (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 764-766 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: There is extensive recent experimental evidence of spontaneous superlattice (SL) formation in various II–VI and III–V semiconductors. Here we propose an atomistic mechanism responsible for SL formation, and derive a relation predicting the temperature, flux, and miscut dependence of the SL layer thickness. Moreover, the model explains the existence of a critical miscut angle below which no SL is formed, in agreement with results on ZnSeTe, and predicts the formation of a platelet structure for deposition onto high symmetry surfaces, similar to that observed in InAsSb. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118253
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  • 10
    Electronic Resource
    Electronic Resource
    Self-assembled island formation in heteroepitaxial growth (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2565-2567 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate island formation during heteroepitaxial growth using an atomistic model that incorporates deposition, activated diffusion, and stress relaxation. For high misfit the system naturally evolves into a state characterized by a narrow island size distribution. The simulations indicate the existence of a strain assisted kinetic mechanism responsible for the self-assembling process, involving enhanced detachment of atoms from the edge of large islands and biased adatom diffusion. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118920
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