ISSN:
1662-8985
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
A series of Ni51.4Mn28.3Ga20.3 films sputter-deposited on Si(100) wafer (with 500 nmthick buffer layer of SiNx) and annealed at 800 oC for 1h. are investigated with respect to theirtransformation behavior and magnetic properties. The film thickness, d, varies from 0.1 to 5.0 μm.Resistivity measurements reveal martensitic transformation above room temperature for all the filmsexcept for 0.1μm-thick film which is transforming at much lower temperature. The magneticcharacteristics of martensitic films such as susceptibility and anisotropy field extracted from the inplaneand out-of-plane magnetization curves show film thickness dependence likewise Curietemperature obtained from the resistivity curves. The surface topography and micromagneticstructure are studied by scanning probe microscopy. A stripe magnetic domain pattern featuring alarge out-of-plane magnetization component is found in the films. The domain width, δ, depends onthe film thickness, d, as δ ~ d
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/41/transtech_doi~10.4028%252Fwww.scientific.net%252FAMR.52.35.pdf
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