Electronic Resource
s.l. ; Stafa-Zurich, Switzerland
Solid state phenomena
Vol. 131-133 (Oct. 2007), p. 107-112
ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
In this study, Co germanide Schottky barrier diodes on n-Ge (100) substrate werefabricated by sputtering metal Co on Ge, followed by annealing in vacuum at 700°C. The influenceof annealing time was investigated on both the electrical properties of Co germanide Schottkybarrier diodes and on the phase formation on n-Ge (100) substrate. With increasing annealing timesgrowing or transformation of germanide entities occurs leading to reduction of the trapconcentration and therefore the leakage current
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/24/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.131-133.107.pdf
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