Library

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 60 (1995), S. 321-324 
    ISSN: 1432-0630
    Keywords: PACS: 73.40.Ns
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. The effects of interaction between a thick In layer and heat-treated GaAs at 570 °C are studied with Scanning Electron Microscopy (SEM), Secondary Ion Mass Spectrometry (SIMS), Rutherford Backscattering Spectrometry (RBS), X-Ray Diffraction (XRD) and Nomarski microscopy. It is shown that, besides the well-known InGaAs crystallites which epitaxially grow upon dissolution of the substrate, an array of In-rich dendrites is observed whose density correlates with the density of the crystal dislocations. The driving force for In to protrude along the dislocations to eventually form In(Ga)As spikes is apparently excess arsenic reported to be present in the vicinity of the individual dislocations. It is postulated that the existing data concerning the coefficient of classical diffusion of In in GaAs may be overestimated by a factor of 106.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 153-160 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nitrogen redistribution toward the sample surface during the implantation processes performed at temperatures ranging from room temperature to 250 °C was studied for pure iron by means of nuclear reaction analysis and secondary-ion-mass spectrometry. The role of carbon and radiation defects was investigated. The results reveal the importance of radiation defects on nitrogen migration and trapping. The migration mechanism was identified as a radiation-induced segregation.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 33 (1984), S. 167-173 
    ISSN: 1432-0630
    Keywords: 66.30 jt ; 79.20.Nc
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The redistribution of thin metallic markers due to ion irradiation was studied by backscattering spectrometry in Al, Al2O3, Si, and SiO2. Marker species were selected for their similar masses and different chemical reactivities with the host media and included Ti, Fe, W, Pt, and Au. It was found that the marker signals are Gaussian and that the varianceσ 2 of the marker atom distributions increases linearly with the dose of the irradiation, is insensitive to the temperature of irradiation in the range of 80–∼300 K, and depends linearly on the nuclear stopping power of the incident ions. The absolute values ofσ 2 for Ti, Fe, W, Pt, and Au markers in Al and Al2O3, W, and Pt in SiO2 and W in Si is, within±50 %, of 6.5×103Å2 for 300 keV, 8×1015 Xe ions/cm2. These observations suggest that collisional cascade mixing is a dominant mechanism in this type of impurity-matrix combinations. Only Au and Pt in Si mix at a larger rate:σ 2 for Pt is about 3 and for Au about 5 times larger thanσ 2 for all other markers. Lower threshold displacement energies and/or the contribution of processes other than cascade mixing are possible considered reasons. In polycrystalline Al, a rapid migration of Au and Pt atoms throughout the Al layer, similar to grain boundary diffusion, is observed.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 60 (1995), S. 321-324 
    ISSN: 1432-0630
    Keywords: 73.40.Ns
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The effects of interaction between a thick In layer and heat-treated GaAs at 570°C are studied with Scanning Electron Microscopy (SEM), Secondary Ion Mass Spectrometry (SIMS), Rutherford Backscattering Spectrometry (RBS), X-Ray Diffraction (XRD) and Nomarski microscopy. It is shown that, besides the well-known InGaAs crystallites which epitaxially grow upon dissolution of the substrate, an array of In-rich dendrites is observed whose density correlates with the density of the crystal dislocations. The driving force for In to protrude along the dislocations to eventually form In(Ga)As spikes is apparently excess arsenic reported to be present in the vicinity of the individual dislocations. It is postulated that the existing data concerning the coefficient of classical diffusion of In in GaAs may be overestimated by a factor of 106.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...