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  • 1
    Electronic Resource
    Electronic Resource
    Linear arc discharge source for large area plasma processing (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 577-579 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A linearly scalable plasma source based on the radio frequency generated hot hollow cathode discharge between two parallel plates with a magnetic field perpendicular to the plates near the outlet of the cathode is introduced. The magnetic field facilitates and confines the hollow cathode discharge which leads to a high power density and a high cathode wall temperature. The geometry and location of hot zones is directly controlled by magnetic field. The linear arc discharge (LAD) source exhibits similar features as the cylindrical radio frequency hollow cathode plasma jet. Experiments indicate a metastable assisted growth of TiN films. LAD source extends abilities of the radio frequency hollow cathode plasma jet to the large area processing. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118210
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Superhigh-rate plasma jet etching of silicon (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1615-1617 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new, very high rate dry etching system based on the plasma jet principle is presented. In this device the active gases are fed into the processing vacuum chamber through a small 0.5 mm i.d. nozzle. By applying radio frequency power (13.56 MHz) a hollow cathode discharge is created inside the nozzle. This discharge will be very intense and effective in dissociating the gas mixture used for reactive etching. A jet stream of radicals will be formed. By placing a silicon substrate in front of this jet stream it is possible to perform very high rate reactive etching of silicon. Etch rates as high as 0.1–0.2 mm/min can be easily obtained. It is demonstrated that the etch rate and the width of the etching crater are sensitive to different processing conditions. The width of the etching crater may be smaller than the diameter of the nozzle exit under certain conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102215
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  • 3
    Electronic Resource
    Electronic Resource
    Comparison of the radio frequency hollow cathode to the microwave antenna discharge for plasma processing (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1703-1709 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two nonconventional systems, the radio frequency hollow cathode discharge (RHCD) and the microwave antenna discharge (MWAD), with almost identical geometry of electrodes generating a nitrogen plasma at power level up to 60 W were compared. Both systems were used for deposition of nitride films at similar experimental parameters. The Al–N films were deposited in the RHCD system by reactive physical vapor deposition (PVD) using an Al radio frequency hollow cathode and the CNx films were deposited in the MWAD system by plasma activated chemical vapor deposition (PACVD) from N2+1% (alternatively 0.5% or 0.4%) C2H2 gas mixtures. The vibrational temperatures of nitrogen molecules in both systems were compared as functions of experimental parameters and discussed with respect to the film growth rates in the particular systems. It was found that irrespective of frequency difference of two orders of magnitude the vibrational temperatures of nitrogen molecules were similar, between 3000 and 4600 K, in both systems at similar experimental conditions. However, shapes of dependences of the vibrational temperature on particular parameters were different, due to different plasma generation principles. The nitride film growth rates were found to correlate to the vibrational temperatures of nitrogen molecules, but their dependences on experimental parameters were affected by specific features of the plasma generation in individual systems as well as by different mechanisms of the PVD and the PACVD of films. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1385355
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  • 4
    Electronic Resource
    Electronic Resource
    Metastable assisted deposition of TiN films (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1521-1523 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An excess heat from an exothermic reaction of metastable Ar (43P0) and Ar (43P2) atoms with N2 molecules at low contents of N2 in Ar was found to be responsible for an enhanced thermionic emission, an enhanced production of Ti target vapor, an increased ionization, and consequently for an enhanced deposition rate of TiN films in the radio frequency hollow cathode plasma jet (RHCPJ). This finding emphasizes favorable geometry of hollow cathodes, as well as an important role of metastables in plasma-assisted processes. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114479
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  • 5
    Electronic Resource
    Electronic Resource
    Fused hollow cathode cold atmospheric plasma (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 285-287 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A fused hollow cathode (FHC) plasma source is introduced. The system of radio-frequency (rf) generated hollow cathodes with flowing gas forms an integrated electrode source which operates in the pressure range from 1 Torr to atmospheric pressure. The diameter of the source is 3.5 cm. However, the construction perfectly enables further scaling up. The forward rf power to sustain the discharge at atmospheric pressure can be as low as 2 W. The discharge is stable, volume filling, silent, with no streamers. The FHC atmospheric plasma source is very promising for surface processing, specially on temperature sensitive substrates, and may substantially save costs by avoiding investments into the vacuum equipment. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125723
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  • 6
    Electronic Resource
    Electronic Resource
    Low pressure r.f. plasma jet-a new tool for surface processing
    Amsterdam : Elsevier
    Surface & Coatings Technology 54-55 (1992), S. 91-95 
    Details
    ISSN: 0257-8972
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0257-8972(92)90145-Z
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  • 7
    Electronic Resource
    Electronic Resource
    Neutral gas flow velocity profiles in the jet plasma-chemical reactor
    Amsterdam : Elsevier
    Vacuum 40 (1990), S. 449-452 
    Details
    ISSN: 0042-207X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0042-207X(90)90243-R
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  • 8
    Electronic Resource
    Electronic Resource
    Effect of post-deposition vacuum annealing on properties of ITO layers
    Amsterdam : Elsevier
    Vacuum 38 (1988), S. 455-457 
    Details
    ISSN: 0042-207X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0042-207X(88)90587-8
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  • 9
    Electronic Resource
    Electronic Resource
    Effect of the oxygen absorption on properties of ITO layers
    Amsterdam : Elsevier
    Vacuum 39 (1989), S. 33-36 
    Details
    ISSN: 0042-207X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0042-207X(89)90095-X
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  • 10
    Electronic Resource
    Electronic Resource
    Afterglow and decaying plasma CVD systems
    Amsterdam : Elsevier
    Vacuum 38 (1988), S. 637-642 
    Details
    ISSN: 0042-207X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0042-207X(88)90433-2
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