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  • 1
    Electronic Resource
    Electronic Resource
    Formation of etch pits during carbon doping of gallium arsenide with carbon tetrachloride by metalorganic vapor-phase epitaxy (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 318-324 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Scanning tunneling microscopy was used to examine the effects of carbon tetrachloride concentration and temperature on the morphology of carbon-doped gallium arsenide films grown by metalorganic vapor-phase epitaxy. Deposition was carried out at 505–545 °C, a V/III ratio of 75, and IV/III ratios between 0.5 and 5.0. The growth rate declined monotonically with increasing carbon tetrachloride concentration. Step bunching and pinning was observed at a IV/III ratio of approximately 2.5. Increasing this ratio further resulted in the formation of pits ranging from 20 to 50 nm in diameter. These results can be explained by two competing processes that occur at the step edges: (1) the reaction of chlorine with adsorbed gallium from the group III precursor, and (2) the reaction of chlorine with gallium arsenide. Both reactions desorb gallium chlorides and reduce the growth rate, but only the latter reaction produces pits. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370731
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  • 2
    Electronic Resource
    Electronic Resource
    Step structure of arsenic-terminated vicinal Ge (100) (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 2004-2006 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Germanium (100) crystals, 9° off-axis towards the [011] were exposed to 2.0 Torr of tertiarybutylarsine and 99.0 Torr of hydrogen at 650 °C, then heated to between 450 and 600 °C in vacuum or H2. The resulting surfaces consist of narrow dimer-terminated terraces, with (1×2) and (2×1) domains, that are separated by steps between one and eight atomic layers in height. The distribution of (1×2) and (2×1) domains changes with temperature, exhibiting a pronounced maximum in the (1×2) fraction at 510 °C. These results suggest that the arsenic passivation of germanium is a critical step in gallium arsenide heteroepitaxy. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369176
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  • 3
    Electronic Resource
    Electronic Resource
    Reflectance difference spectroscopy of mixed phases of indium phosphide (001) (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 55-57 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reflectance difference spectra of mixed (2×1) and (2×4) phases of indium phosphide (001) have been recorded and benchmarked against scanning tunneling micrographs of the surface. The line shapes are found to be linear combinations of the spectra of the pure (2×1) and (2×4) structures, Δr/rmixed=xΔr/r(2×4)+(1−x)Δr/r(2×1), where x is the weighting factor. Thus, in the absence of adsorbates, the reflectance difference spectra can be used to estimate the surface composition, i.e., the fractional coverage of phosphorous is aitch-thetaP=1−0.81x±0.06x. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1337620
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    Paper (German National Licenses)
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