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  • 1
    Electronic Resource
    Electronic Resource
    Thermal stability of Mo–V epitaxial multilayers (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2008-2013 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By use of transmission electron microscopy and x-ray diffraction the degradation of the structure of epitaxial crystalline Mo–V multilayers has been studied during annealing between 1000 and 1250 K. In low vacuum (10−4 mbar), first, a polygonization (driven by the elastic mismatch due to the oxidation of V) took place, which led to a grain size in the order of the thickness of the individual layers (i.e., 1–2 nm). At longer annealing times, a partial recrystallization of Mo—parallel with a grain-boundary assisted discontinuous structural transformation—was observed. The (200) texture was preserved during the degradation process. At low temperatures and in low vacuum, this process was fast, while with improving the vacuum (up to 10−7 mbar) the polygonization was slower and above 1200 K the bulk diffusion controlled intermixing was observed with a final state of completely homogeneous solid solution. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371001
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  • 2
    Electronic Resource
    Electronic Resource
    Kinetics of evaporation of beaded Ag film on sapphire and on alumina scale (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1474-1479 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Morphological changes of beaded Ag film on sapphire and on alumina scale were investigated by means of scanning electron microscopy and Auger spectroscopy in the temperature range of 822–973 K. It was found that the decrease of the effective thickness and the shift of the boundary of the layer can be attributed to the evaporation of silver into the gas phase. Experimental results were analyzed in terms of the model developed by Kaganovskii and Beke. Our results show that the process is controlled by surface diffusion and temperature dependence of the surface mass transport coefficients is deduced from the experimental data. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363016
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  • 3
    Electronic Resource
    Electronic Resource
    Size effects in surface segregation (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 3021-3027 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of the slab thickness (d) on the segregation behavior has been investigated for a phase separating system in a slab consisting of atomic planes parallel to the free surfaces. The calculations were carried out using the Fowler–Guggenheim approximation in the monolayer limit. It is shown, that by varying the surface fraction ξ, a surface phase transition can occur, similar to a semi-infinite system where a change in temperature can lead to a phase transition (S-shaped segregation isotherm). Furthermore, the existence of a minimum on the free energy curve versus d was examined. It was demonstrated that such a minimum can exist in the nanocrystalline region. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367125
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  • 4
    Electronic Resource
    Electronic Resource
    Interdiffusion in amorphous Si/Ge multilayers by Auger depth profiling technique (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 804-806 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It has been shown by the Auger depth profiling technique that the concentration profile at the initially sharp Si/Ge interface in amorphous Si/Ge multilayers shifted but remained still sharp after a heat treatment at 680 K for 100 h. At the same time the fast diffusion of Si resulted in the formation of an almost homogeneous Ge(Si) amorphous solid solution, while there was practically no diffusion of Ge into the Si layer. This is direct evidence on the strong concentration dependence of the interdiffusion coefficient in amorphous Si/Ge system, and it is in accordance with the previous indirect result obtained from the measurements of the decay of the small angle Bragg peaks, as well as with finite difference simulations. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1331330
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  • 5
    Electronic Resource
    Electronic Resource
    Mössbauer study of iron in the grain boundary of aluminium (1989)
    Springer
    Journal of radioanalytical and nuclear chemistry 136 (1989), S. 371-377 
    Details
    ISSN: 1588-2780
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Energy, Environment Protection, Nuclear Power Engineering
    Notes: Abstract Iron was diffused into aluminium along grain boundaries and studied by Mössbauer spectroscopy. The Mössbauer spectrum of the investigated sample contained one doublet with isomer shift δ=0.360/5/ mm s−1 /relative to α-iron/ and quadrupole splitting Δ=0.84/l/ mm s−1. These results suggest that the iron atoms in the grain boundaries of aluminium have environment very similar to that which is present in amorphous iron /III/ oxides.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02164729
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