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  • 1
    Electronic Resource
    Electronic Resource
    Thin layers of gallium-arsenide: A molecular orbital study (1992)
    Springer
    Czechoslovak journal of physics 42 (1992), S. 1005-1013 
    Details
    ISSN: 1572-9486
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The quasirelativistic INDO/1 method has been used to generate molecular orbitals for some {GaAs}n clusters up to 160 atoms. On the basis of these one-electron energy levels the density of states (DOS) and density of hole functions have been calculated. Various projections of DOS functions are discussed. The calculations are compared with those generated by periodic crystal orbitals of the EHT quality and with experimental ESCA spectra on thin layers of GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01589538
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Thin layers of grey arsenic: A molecular orbital study (1993)
    Springer
    Czechoslovak journal of physics 43 (1993), S. 813-819 
    Details
    ISSN: 1572-9486
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract A thin layer of grey arsenic has been manufactured by molecular beam epitaxy and its He(I) photoelectron spectrum has been recorded. The quasi-relativistic CNDO/1 method has been used to investigate the band structure of {As}114 and {As}228 clusters: the DOS profiles and their projections are under question. These data were correlated with the periodic crystal orbitals of the EHT quality. The first excitation energy serves as a better estimate of the energy gap between the filled valence band and the empty conduction band.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01589803
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Thin layers of aluminium: A molecular orbital study (1994)
    Springer
    Czechoslovak journal of physics 44 (1994), S. 585-593 
    Details
    ISSN: 1572-9486
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Molecular beam epitaxy has been used to prepare thin layers (200 nm thickness) of aluminium grown either on aluminium or gallium arsenide substrates; their He(I) and He(II) photoelectron spectra have been recorded. The quasirelativistic CNDO/1 method has been applied to investigate the band structure of {Al}172, {Al}284 and {Al}424 clusters obtained by a duplication of the unit cell: the DOS profiles and their projections were generated. These data were correlated with the periodic crystal orbitals of the EHT quality. The first excitation energy serves as a better estimate of the vanishing energy gap showing thus a metallic character of aluminium.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01689606
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    Paper (German National Licenses)
    Fulltext
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