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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Chemistry of materials 6 (1994), S. 122-126 
    ISSN: 1520-5002
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 114 (2001), S. 10170-10180 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We have investigated the room temperature adsorption of methylamine, dimethylamine and trimethylamine using density functional theory (DFT) and multiple internal reflection Fourier transform infrared (MIR-FTIR) spectroscopy. It was found that the reaction pathways of the amines resemble the precursor-mediated dissociative chemisorption of ammonia. Our calculations showed that although dissociation involving N–C bond cleavage is thermodynamically more favorable than the N–H dissociation pathway, the activation barrier for N–CH3 dissociation is significantly higher than that for N–H dissociation. This leads to selective cleavage of N–H bonds in the surface reactions of methylamine and dimethylamine, while trapping trimethylamine in its molecularly chemisorbed state through the formation of a Si–N dative bond. We also identified the products of the reactions of the amines on the Si(100)-2×1 surface by surface IR studies, confirming the theoretical predictions. The selectivity observed in the surface chemistry of simple model amines is briefly discussed in the context of organic chemistry at semiconductor surfaces. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 108 (1998), S. 4599-4606 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The mechanism and intermediates of a Diels–Alder-type cycloaddition reaction between dienes and the silicon dimers of a Si(100)-2×1 surface, which was theoretically predicted by Doren and Konecny, have been investigated. The reactions of 1,3-butadiene and 2,3-dimethyl-1,3-butadiene were studied using multiple internal reflection infrared spectroscopy, thermal desorption spectrometry, and near edge x-ray absorption fine structure (NEXAFS) measurements. The results show that the compounds physisorb on Si(100)-2×1 at cryogenic temperature. Infrared studies of the room temperature adsorption of both dienes indicate that reaction leads to the formation of stable, chemisorbed Diels–Alder adducts. By NEXAFS measurements on 2,3-dimethyl-1,3-butadiene, we determine that the angle between the π orbitals of the reaction product and the Si(100)-2×1 surface is near 40°. Upon heating, the chemisorbed butadienes primarily decompose to form adsorbed carbon and hydrogen at the surface. Hydrogenation of chemisorbed butadienes by atomic hydrogen was also investigated, and conversion from the Diels–Alder geometry to [2+2] bonding is observed. This effect is attributed to cleavage of the Si–Si dimer bond upon atomic hydrogen exposure. Temperature dependent studies suggest the presence of an activation barrier for chemisorption at low temperature. The parallels between our experimental results and the theoretical studies of these reactions are discussed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4600-4610 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure, composition, and bonding in hydrogenated amorphous silicon carbon alloy (a-SiC:H) films grown at different substrate temperatures were investigated by a combination of multiple internal reflection-Fourier transform infrared spectroscopy and near edge x-ray absorption fine structure measurements. Hot wire chemical vapor deposition (HW–CVD) was used to grow the thin films at substrate temperatures ranging from 200 to 600 K using mono- and trimethylsilane as precursors. It is found that raising the substrate temperature during HW–CVD leads to films depleted in the higher hydrides (namely SiH3, SiH2, and CH3) in favor of the lower hydrides (SiH and CH). This change marks a transition of the film structure from a highly methylated-polysilane backbone to a polycarbosilane backbone. In addition, some crystalline characteristics appear with increasing substrate temperature, demonstrating that the change of substrate temperature affects both the hydrogen configuration and the microstructure of the film. Temperature-dependent growth of thin a-SiC:H films by HW–CVD is compared with the method of electron cyclotron resonance plasma-enhanced (PECVD). © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1784-1786 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Radicals produced by the hot wire-induced decomposition of silane have been identified using vacuum ultraviolet single photon ionization (SPI). This laser-based technique uses 118 nm photons (10.5 eV) to ionize gas phase species; the resulting photoions are detected using time-of-flight mass spectrometry. The major silicon-containing gas-phase species identified by SPI during hot-wire activation of silane gas are Si, SiH3, and Si2H6. These results demonstrate that single photon ionization can be a powerful probe for in situ, real-time detection of multiple species in hot wire chemical vapor deposition. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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