ISSN:
1089-7690
Source:
AIP Digital Archive
Topics:
Physics
,
Chemistry and Pharmacology
Notes:
Oxygen etching reactions of silicon cluster cations and anions are studied with a fast-flow reaction apparatus. Ions incorporating silicon oxides are not observed as products in either the cation or anion studies. Magic clusters are identified as n=4, 6, 9, 13, 14, and 23 for the cations. For the anions, where there are no previous studies of oxygen etching reactions, magic clusters are found at n=18, 21, 24, 25, and 28. We note good overall agreement with past experimental findings in the case of cations, and with theoretically predicted structures for both anions and cations. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1486439
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