Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
85 (1999), S. 1989-1991
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have investigated the spontaneous emission from InAs/GaSb quantum wells grown by molecular beam epitaxy. A strong photoluminescence signal was observed only from samples grown in a narrow substrate temperature range around 400 °C with InSb-like interfaces. From an analysis of the photoluminescence energy with the excitation density, we demonstrated the formation of triangular quantum wells for holes in the GaSb barriers close to the interfaces. Finally, the temperature dependence of the photoluminescence peak energy showed a deviation from the InAs band gap evolution at low temperature, which could be related to the type II broken gap band alignment. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.369175
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