Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Ion beam mixing of ZnO/SiO2 and Sb/Ni/Si interfaces under swift heavy ion irradiation (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1129-1134 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the irradiation induced interface mixing in ZnO/SiO2 (α-quartz) and Sb/Ni/Si thin layer systems under swift heavy ion irradiation in the electronic stopping power regime. The irradiations were carried out at 77 K using 100 MeV Ar, 260 MeV Kr, and 200 MeV Xe ions. For the ZnO/SiO2 system experiments were also carried out at lower ion energies (300, 600, and 900 keV, respectively) where nuclear stopping dominates. The alterations of the interface concentration profiles were determined by means of Rutherford backscattering spectrometry performed subsequently at the irradiated and the nonirradiated parts of the samples. While for the semimetal/metal Sb/Ni interface almost no mixing could be found after high-energy irradiation (mixing efficiency for Xe ions: k/Se〈0.02 nm5/keV) the ceramic system ZnO/SiO2 strongly reacts upon high energy ion irradiation (Xe: k/Se=2.1 nm5/keV). The Ni/Si interface shows an intermediate effect (Xe: k/Se=0.2 nm5/keV). The mixing behavior found at high ion energies is in contrast to that found in the nuclear stopping regime, where Sb/Ni shows very strong mixing and phase formation while ZnO/SiO2 exhibits only weak ballistic mixing. As was previously observed for the formation of ion tracks, interface mixing due to electronic energy deposition also sets in only if the electronic stopping power exceeds a threshold value. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1425439
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    A low-energy ion implanter for surface and materials science (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 2120-2126 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A low-energy ion-beam facility for surface and materials science has been built which allows ion beam treatments of solid surfaces via single-ion impacts up to high-fluence implantations. The system offers mass-separated ion beams of 0.5–10 keV by a normal acceleration, and of 5–2000 eV by an acceleration/deceleration lens combination. Its energy spread is estimated to be as small as 2 eV in the whole range. Ion current densities are available in the range between 0.1 nA/cm2 and up to 50 μA/cm2, corresponding to a particle flux of 109–1014 ions/cm2 s. Homogeneous implantation profiles are achieved using an electrostatic x-y deflection system. First applications for ion induced defect production on highly oriented pyrolytic graphite surfaces detected via scanning tunneling microscopy are presented. Hillock shaped defect formations were detected and attributed to protusions of the atomic surface structure, which were induced by interstitials and interstitial clusters between the first atomic planes originated from recoil atoms of the collision cascade. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148909
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Atomic transport and phase formation in the Sb/Al system induced by heavy-ion bombardment (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2303-2310 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Antimony/aluminium films in bilayer and multilayer geometries were irradiated at liquid-nitrogen temperature with 50–900 keV ion beams ranging in mass from 20Ne to 208Pb. Depth profiling of the element concentrations was carried out via Rutherford backscattering spectroscopy. The formation of intermetallic phases and phase segregation was analyzed by means of x-ray diffraction, cross-section transmission electron microscopy, and scanning electron microscopy. From the low-dose irradiation data, the mixing rates k were obtained and found to depend linearly on the energy density FD deposited at the interface. The mixing efficiency of Sb/Al bilayers, k/FD=296(30) A(ring)5/eV, supports the local thermal spike model. After high-fluence irradiations of Sb/Al bilayers with 550 keV Xe++ ions, a reacted layer of crystalline SbAl (B3 phase) at the interface was observed. Sb/Al multilayers irradiated with 900 keV Xe++ ions were found to become amorphous. Phase formation was studied as a function of the ion fluence, irradiation energy, and ion mass, and was found to start at that fluence, where cracking and shrinking of the Sb top layer and an increase of the sputtering yield were also observed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360148
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Ion-beam induced amorphization and dynamic epitaxial recrystallization in α-quartz (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3120-3123 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the evaluation of ion-beam induced damage in α-quartz and its dynamic annealing behavior in the temperature range between 80 and 1050 K using Rutherford backscattering spectrometry in channeling geometry. The results illustrate that the critical temperature for inhibiting amorphization during irradiation is about Tc(approximate)940 K. The critical fluence φc for amorphization is independent of the temperature up to 550 K, but strongly increases at higher temperatures. The activation energy for the diffusion of defects in the collision cascade or at the amorphous/crystalline interface is found to be 0.28±0.02 eV. The dynamic annealing mechanism is explained by the vacancy out-diffusion model of Morehead and Crowder. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369650
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Processing of Blue Boron Nitride Thin Films with a Solid-Gas ReactionDedicated to Professor Rudolf Taube on the occasion of his 65th birthday (1996)
    Weinheim : Wiley-Blackwell
    Chemistry - A European Journal 2 (1996), S. 1269-1274 
    Details
    ISSN: 0947-6539
    Keywords: borazine ; boron nitride ; materials science ; thin films ; titanium complexes ; Chemistry ; General Chemistry
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: For the first time, solid-gas reaction techniques have been used for the synthesis and processing of thin films of boron nitride. Clear to intensely colored blue BN films were grown on Si(100) substrates by the transformation of borazine (B3N3H6) with a titanium complex as initiator under flowing nitrogen gas. The thickness of the films ranged from 70 to 100 nm, as determined by Rutherford backscattering (RBS) and atomic force microscopy (AFM) analyses. The intensity of the blue color of the thin film can be correlated to its thickness. The composition of the film determined by RBS studies corresponds to the stoichiometric formula B0.49N0.45O0.06, and N/B and O/B ratios are found to be 0.92 and 0.12, respectively. Nitrogen contents determined by nuclear reaction analysis agree well with the RBS results. Moreover, Auger electron spectroscopy (AES) measurements show that no titanium is present in the films and confirm the composition determined by RBS studies. X-ray photoelectron spectroscopy (XPS) shows the presence of boron and nitrogen in the blue BN film. Electron spin resonance (ESR) experiments at 293 and 12 K indicate a single broad signal with a g value (g = 2.005) close to that of a free electron. This synthetic approach provides opportunities for the preparation of new thin-film materials and for the fundamental study of solid-gas reactions.
    Additional Material: 9 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/chem.19960021014
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...