ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract It has been established that chemical etching of porous silicon in HF results in a large change in the current-voltage characteristics and photoluminescence parameters of the silicon. The results of the investigation can be used to increase the efficiency of electroluminescence structures In-〈porous Si〉-Al by increasing the injection level of minority carriers and realizing a regime of double injection and high surface recombination rate near the surface of porous silicon.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187297
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