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  • 1
    Electronic Resource
    Electronic Resource
    Polymer precursor route to titanium diboride (TiB2)/titanium nitride (TiN) nanocomposites (1992)
    s.l. : American Chemical Society
    Chemistry of materials 4 (1992), S. 1139-1141 
    Details
    ISSN: 1520-5002
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/cm00024a005
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  • 2
    Electronic Resource
    Electronic Resource
    Local Potential at Atomically Abrupt Oxide Grain Boundaries by Scanning Probe Microscopy (2001)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 80-81 (Nov. 2001), p. 33-46 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.80-81.33.pdf
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  • 3
    Electronic Resource
    Electronic Resource
    Carbon nanotubes as a tip calibration standard for electrostatic scanning probe microscopies (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 754-756 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Scanning surface potential microscopy (SSPM) is one of the most widely used techniques for the characterization of electrical properties at small dimensions. Applicability of SSPM and related electrostatic scanning probe microscopies for imaging of potential distributions in active micro- and nanoelectronic devices requires quantitative knowledge of tip–surface contrast transfer. Here we demonstrate the utility of carbon-nanotube-based circuits to characterize geometric properties of the tip in the electrostatic scanning probe microscopies. Based on experimental observations, an analytical form for the differential tip–surface capacitance is obtained. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1496129
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  • 4
    Electronic Resource
    Electronic Resource
    Scanning tunneling microscope combined with scanning electron microscope for the study of grain boundaries (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 3199-3203 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An instrument that incorporates a scanning electron microscope (SEM) and a scanning tunneling microscope (STM) in an ultrahigh vacuum environment was designed to address the specific difficulties of imaging heterogeneous surfaces. A sample may be mounted in the STM for simultaneous STM and SEM imaging, or transferred to a manipulator where other surface analytical tools may be utilized. The STM is based on a viton-stainless-steel stack design and the SEM employs a 5 kV, electrostatic-lens electron gun. The sample mount is fixed, while the tip can be positioned in three orthogonal directions. Macroscopic positioning of the tip is accomplished using two orthogonal linear piezoelectric "inchworm'' motors and a stepper motor, whereas microscopic positioning is accomplished with a piezoelectric tube scanner
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144550
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  • 5
    Electronic Resource
    Electronic Resource
    Effect of phase transition on the surface potential of the BaTiO3 (100) surface by variable temperature scanning surface potential microscopy (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 3950-3957 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Variable temperature atomic force microscopy and scanning surface potential microscopy are used to characterize the ferroelectric BaTiO3 (100) surface. The influence of domain structure on surface topography and surface potential distribution is discussed. Domain induced surface corrugations were found to disappear above the Curie temperature confirming the local phase transition. Associated variations of surface potential are quantified. Relaxation of surface potential after the transition to paraelectric state on heating and during the transition to the ferroelectric state on cooling was observed. Differences in kinetics of the topographic structure and surface potential variations are used to distinguish polarization compensation mechanisms. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372440
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  • 6
    Electronic Resource
    Electronic Resource
    Scanning impedance microscopy of an active Schottky barrier diode (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 832-839 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrostatic force sensitive scanning probe microscopy is used to quantify dc and ac transport properties of an active Schottky barrier diode. Scanning surface potential microscopy (SSPM) of the laterally biased device is used to quantify the potential drop at the metal–semiconductor interface. Ramping the lateral bias allows the local voltage and I–V characteristics of the diode to be reconstructed. Scanning impedance microscopy (SIM) demonstrates the phase and amplitude change of voltage oscillations across the interface. The frequency dependence of voltage phase shifts across the interface defines the appropriate equivalent circuit for the reverse biased junction. Excellent agreement between junction capacitance obtained from SIM measurements and impedance spectroscopy is demonstrated. Variation of the dc component of lateral bias in SIM yields the local capacitance–voltage characteristics of the junction. SIM contrast of grain boundaries in p-doped silicon was interpreted in terms of minority carrier generation in the interface region. The combination of SSPM and SIM provides an approach for the quantitative analysis of local dc and ac transport properties which were demonstrated for a Schottky diode but can be applied to any semiconductor device. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1427145
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  • 7
    Electronic Resource
    Electronic Resource
    Domain polarity and temperature induced potential inversion on the BaTiO3(100) surface (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3816-3823 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Variable temperature scanning surface potential microscopy is used to determine thermodynamic and kinetic parameters associated with polarization screening on BaTiO3(100) surfaces. The temperature dependence of the surface potential is indicative of the interplay between the fast dynamics of atomic polarization and slower dynamics of screening charge. The screening charge relaxation kinetics are found to be weakly dependent on temperature with activation energy Ea∼4 kJ/mole. Equilibrium domain potential difference depends linearly on temperature; the zero potential contrast is observed at ∼110 °C. At room temperature the sign of domain potential is determined by the screening charges rather than polarization charge. A thermodynamic model for screening of ferroelectric surfaces based on Ginzburg–Devonshire theory is developed so that the enthalpy and entropy of charge compensation can be derived from the temperature dependence of surface potential contrast. In the case of BaTiO3 in air, the charge compensation mechanism is surface adsorption. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1446230
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  • 8
    Electronic Resource
    Electronic Resource
    Erratum: "Scanning impedance microscopy of electroactive interfaces" [Appl. Phys. Lett. 78, 1306 (2001)] (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 4046-4046 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1379072
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  • 9
    Electronic Resource
    Electronic Resource
    Scanning impedance microscopy of electroactive interfaces (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1306-1308 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A scanning probe technique based on the detection of the phase change of cantilever oscillations induced by a lateral bias applied to the sample is developed. This technique is used to investigate Σ5 grain boundary in Nb-doped SrTiO3 bicrystal. Tip bias, frequency, and driving amplitude dependence of cantilever response to sample ac bias were found to be in excellent agreement with the theoretical model. This technique, further referred to as scanning impedance microscopy, allows mapping of the local phase angle of complex microstructures. This technique is complemented by scanning surface potential microscopy (SSPM). Ramping the lateral dc bias during SSPM measurements allows the voltage characteristics of the grain boundary to be reconstructed and dc transport properties to be obtained by an equivalent circuit method. The combination of scanning impedance microscopy and scanning surface potential microscopy allows independent quantification of interface resistivity and capacitance, thus providing spatially resolved impedance spectra of complex microstructures. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1350627
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  • 10
    Electronic Resource
    Electronic Resource
    Magnetic-field measurements of current-carrying devices by force-sensitive magnetic-force microscopy with potential correction (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1005-1007 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A scanning probe technique for current-carrying device imaging is proposed that combines magnetic-force microscopy with surface-potential nulling measurements. The device is ac biased at an off-resonant frequency and the current-induced magnetic field results in cantilever deflection which is detected by a lock-in amplifier. An ac bias at the resonant frequency is simultaneously applied to the tip and conventional scanning surface-potential microscopy feedback is used to match the tip and surface potentials. This multiple-modulation technique allows electrostatic and magnetic interactions to be distinguished and surface-potential and magnetic-force images to be collected simultaneously. The technique, which is referred to as potential-correction magnetic-force microscopy, produces force rather than force-gradient images as in conventional magnetic-force microscopy. Further prospects for potential-sensitive magnetic-force imaging are discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1345818
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