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  • 1
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present low-temperature photoluminescence spectra of molecular-beam epitaxy (MBE) and organo-metallic vapor-phase epitaxy (OMVPE) ZnTe layers deposited on GaAs substrates under different growth conditions. Strong bands associated with Zn vacancies are observed in the MBE materials, while the OMVPE spectra are dominated by sharp impurity-related lines. A number of instrinsic and extrinsic emission lines are identified. No significant shift of these lines is observed relative to their positions in bulk ZnTe, implying stress levels less than 0.1 kbar for both the MBE and OMVPE layers. A study of the effects of the Zn:Te ratio in the MBE growth chamber reveals that for a growth temperature of 325 °C, an optimal value of ∼2.2 produces the highest photoluminescence efficiencies and the strongest intrinsic features. The relative intensity of the vacancy-related emission decreases as the Zn:Te ratio is increased.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1935-1942 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Energy levels of the 4f3 electronic configuration of Nd3+ in barium fluorapatite, Ba5(PO4)3F(B-FAP) have been determined from polarized absorption and fluorescence spectra using crystals at 8 K. Experimental energy-level assignments were made initially by comparing the crystal spectra energy levels with those obtained from those previously reported for Nd3+ in strontium fluorapatite and fluorapatite. The initial crystal-field parameters were calculated by using lattice summation techniques. The crystal-field parameters were varied to obtain a best fit between experimental and theoretical energies and the final values give a root-mean-square deviation of 7.1 cm−1. The odd-fold crystal-field components are used to calculate the emission intensities and lifetimes of the Nd3+ ions in B-FAP. These calculations yield results in good agreement with the experimental measurements of the absorption and emission cross sections and lifetimes. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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