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Passivation of defects at the SrTiO3/Si interface with H and H2 (2002)

Browne, R. J. ; Ogryzlo, E. A.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 80 (2002), S. 2699-2700

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Details

ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: A silicon surface covered with ∼150 Å of strontium titanium oxide was exposed to both atomic and molecular hydrogen at temperatures between 20 and 300 °C. A rf probe was used to continuously monitor changes in charge-carrier recombination centers at the SrTiO3/Si interface by following the steady-state photogenerated carrier concentration in the silicon. Independent passivation of interfacial defects was observed by both atomic and molecular hydrogen. © 2002 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1472475

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