Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    The surface chemistry of vinyl iodide on platinum(111) (1992)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 114 (1992), S. 2031-2039 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00032a016
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Unpinned gallium oxide/GaAs interface by hydrogen and nitrogen surface plasma treatment (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 332-334 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Fermi level at the Ga oxide/GaAs interface has been unpinned by rf plasma cleaning the GaAs surface in H2 and N2. Following plasma cleaning, a Ga oxide film is reactively electron beam deposited onto the substrate. Metal-oxide-semiconductor (MOS) capacitors fabricated on these structures show good high-frequency capacitance-voltage characteristics. This indicates that the density of interface states has been reduced to ∼1011 eV−1 cm−2. The MOS capacitors are found to be stable in air after several months.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100961
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Trapped positive charge in plasma-enhanced chemical vapor deposited silicon dioxide films (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1037-1039 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report an investigation of trapped positive charge in as-fabricated plasma-enhanced chemical vapor deposited SiO2 films using electrical and spin resonance techniques. We show that the positive charge results from donor-like "slow'' interface states ("anomalous positive charge'') rather than trapped holes, and that most (∼95%) of the positive charge is not related to E' centers. The positive charge is similar to that seen in electron-injected thermally grown SiO2, and unlike radiation-induced trapped holes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103327
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Anode hole injection and trapping in silicon dioxide (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 304-317 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hole injection into silicon dioxide films from the polycrystalline-silicon anode or from the anode/oxide interface is demonstrated to unequivocally occur for any case where electrons are present in the oxide conduction band and where the average electric field in the oxide exceeds 5 MV/cm (thick-film limit) or the voltage drop across the oxide layer is at least 8 V (thin-film limit). The hole generation is directly shown to be related to the appearance of hot electrons with kinetic energies greater than 5 eV in the oxide conduction band near the anode region. Monte Carlo simulations confirm that the electron energy distribution at the anode is the controlling variable and that hot hole injection occurs mostly over the anode/oxide energy barrier. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362821
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Fabrication of midgap metal gates compatible with ultrathin dielectrics (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1676-1678 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A process has been described which can produce a midgap tungsten gate compatible with the current and future complementary metal–oxide–semiconductor technology. The tungsten was deposited directly onto a 3.0 nm SiO2 gate dielectric without measurable degradation of any of its electrical properties. The tungsten deposition process yields no reactive or corrosive by-products that affect the gate dielectric integrity. The tungsten film is found to be pure within the limits of several analytical techniques and the resistivity of the tungsten films was found to be within a factor of 2 of the bulk value. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122242
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Defect generation in 3.5 nm silicon dioxide films (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1820-1822 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The generation of defects in thin 3.5 nm SiO2 films has been measured as a function of the average electron energy and total injected fluence. It is found that the generation of defects during electron injection for both positive and negative bias manifests itself as positive charge as measured from the increase in the current for a given bias. Positive charge generation is seen for electrons injected into the silicon dioxide conduction band, with the generation rate increasing with increasing electron energy. Electrons that traverse the oxide film via direct quantum-mechanical tunneling do not generate measurable defects. These results are consistent with previously published results on thicker films where the defects were attributed to positive charge found near the anode. © 1994 American Institue of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112854
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    On the generation of interface states from electron-hole recombination in metal-oxide-semiconductor capacitors (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1257-1259 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this study, we have measured the interface state generation rate resulting from the recombination of free electrons and trapped holes, which occurs either away from or near the silicon/silicon dioxide interface. For recombination events that occur away from the silicon/silicon dioxide interface (by using hole trapping on bulk-oxide ion-implanted arsenic sites), we find an interface state generation rate of approximately 0.024 states per recombination event. For recombination near the silicon/silicon dioxide, the generation rate increases by more than an order of magnitude to approximately 0.27 states per event. Therefore, interface states are more readily produced from electron/hole recombination events that occur near the Si/SiO2 interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113008
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Atomic hydrogen-induced interface degradation of reoxidized-nitrided silicon dioxide on silicon (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 901-903 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Remote hydrogen plasma exposure is used to study the transport of atomic hydrogen, H0, through reoxidized-nitrided oxides and SiO2 and to quantify H0-induced degradation of their interfaces with silicon. It is directly demonstrated that (1) H0 is extremely reactive and produces large numbers of interface states; (2) the transport of H0 to the silicon/oxide interface is strongly suppressed in reoxidized-nitrided oxides; and (3) this suppression of the H0 transport is mainly responsible for the much slower interface degradation of reoxidized-nitrided oxides during high-field, hot-electron stress as compared to thermal oxide.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110990
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Interface states induced by the presence of trapped holes near the silicon–silicon-dioxide interface (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2032-2040 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Trapped holes are shown to induce "slow'' interface states by their presence that are distinctly different from other types of interface states. These slow states can be alternately introduced and removed by sequential hole generation and annihilation. Various experiments and techniques are used to rule out explanations involving artifacts due to lateral nonuniformities in the hole trapping. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359575
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Defects generated by Fowler–Nordheim injection in silicon dioxide films produced by plasma-enhanced chemical-vapour deposition with nitrous oxide and silane (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1818-1823 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality silicon dioxide films have been produced using a direct plasma-enhanced chemical vapour deposition process with silane, nitrous oxide and helium that leaves a nitrided layer at the Si-SiO2 interface. X-ray photoelectron spectroscopy coupled with etch-back of the films has shown that the interface nitrogen is incorporated by nitridation of the silicon surface. Fowler–Nordheim injection measurements on thin films annealed after deposition for 1 minute at 950 °C show that the neutral-trap generation and interface state generation rates are comparable to that of thermal oxide if a proper deposition power is chosen. The data is consistent with an interpretation in which fast donor states, not Pb centres, account for almost all of the increase in the charge trapped at the interface. Too high deposition powers lead to excessive nitrogen and higher interface state generation rates. It is proposed that improved performance under hot-electron stress could be obtained by using an optimal deposition power to obtain an optimal nitrogen concentration followed by annealing in oxygen. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360762
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...