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  • 1
    Electronic Resource
    Electronic Resource
    Structural studies of zirconium alkylphosphonate monolayers and multilayer assemblies (1993)
    s.l. : American Chemical Society
    Langmuir 9 (1993), S. 2156-2160 
    Details
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/la00032a042
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  • 2
    Electronic Resource
    Electronic Resource
    Investigating individual chromopores within single porous silicon nanoparticles (2001)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 114 (2001), S. 8119-8123 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We use single nanoparticle luminescence microscopy to determine a distribution of individual chromophores present in porous Si nanoparticles. From these distributions, we determine the average number of emitting chromophores in each nanoparticle and the fluorescence emission count rate of a single chromophore within the porous silicon nanoparticle. We also show that the same size nanoparticles prepared under two different electrochemical conditions have different fluorescence peak maxima, and exhibit different chromophore number distributions, consistent with the quantum confinement model for the luminescence in porous silicon. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1355764
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  • 3
    Electronic Resource
    Electronic Resource
    Probing nanoscale photo-oxidation in organic films using spatial hole burning near-field scanning optical microscopy (2000)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 112 (2000), S. 7864-7872 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Spatial hole burning near-field scanning optical microscopy (SHB–NSOM) is used to locally photopattern three species of organic thin films, poly(2-methoxy, 5-(2′-ethyl hexyloxy)–p-phenylene vinylene) (MEH–PPV), tris-8-hydroxyquinoline aluminum (Alq3) and dye-functionalized polyelectrolyte self-assembled layers, on a 100 nm length scale. In SHB–NSOM the film is illuminated with light from a stationary NSOM tip to induce photo-oxidation. The reduction in the fluorescence yield resulting from this exposure is then mapped using fluorescence NSOM (FL–NSOM). We have examined the localized photo-oxidation as a function of time, position, and environment free from the limits of far-field spatial averaging. In all of the thin film materials studied we find that the long-time diameter of the dark spot is much larger than the tip diameter and is a signature of energy migration. Characteristic lengths of the energy migration are extracted from this data by a simple diffusion model and are found to be of the order of a few hundred nanometers for each of the films studied. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.481391
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  • 4
    Electronic Resource
    Electronic Resource
    Oxidation of GaAs(110) with NO2: A molecular beam study (1995)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 102 (1995), S. 5542-5550 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We describe time-resolved modulated molecular beam measurements of the adsorption of NO2 on the GaAs(110) surface. These measurements provide a quantitative description of the gas–surface interaction; thermal NO2 has a nearly unity sticking probability, dissociating to form NO (which quickly desorbs) and a surface oxide of ∼1/3 ML saturation coverage. The NO2 dissociation probability is strongly controlled by the defect density, the oxygen coverage, and the surface temperature. We have characterized the competition between the processes leading to oxygen deposition, i.e., desorption and diffusion of NO 2 to reactive defects. The barrier energies Ediff=6±2 kcal/mol and Edes=9±2 kcal/mol provide an interesting example of the transition from defect-dominated surface chemistry, typical of low Miller index metal surfaces to defect- insensitive diffusion-limited chemistry, which we argue is generic to corrugated semiconductor surfaces. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.469283
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  • 5
    Electronic Resource
    Electronic Resource
    Quantum correlation among photons from a single quantum dot at room temperature (2000)
    [s.l.] : Macmillian Magazines Ltd.
    Nature 406 (2000), S. 968-970 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Maxwell's equations successfully describe the statistical properties of fluorescence from an ensemble of atoms or semiconductors in one or more dimensions. But quantization of the radiation field is required to explain the correlations of light generated by a single two-level quantum ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/35023100
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  • 6
    Electronic Resource
    Electronic Resource
    Imaging InGaAsP quantum-well lasers using near-field scanning optical microscopy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7720-7725 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The application of near-field scanning optical microscopy (NSOM) to the characterization of InGaAsP multiquantum-well lasers is reported. Collection mode images are collected at varying drive currents from well below to well above the threshold current. The high resolution of NSOM (∼λ/20) provides a detailed mapping of the laser output from the active region as well as additional output from the surrounding mesa. Spectral analysis of the image shows that the extra emission is due to InP electroluminescence. In addition to the emission characteristics of the laser it is also possible to detect local heating of the laser facet via thermal expansion. Topographical images are achieved simultaneously with NSOM images by digitizing the feedback signal which maintains a constant tip-surface gap. It is shown that these data have direct implications on device performance and problems associated with carrier leakage and nonradiative defects. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357946
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  • 7
    Electronic Resource
    Electronic Resource
    Near-field photoconductivity of stretch-oriented poly(para-phenylene vinylene) (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3814-3816 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Near-field scanning optical microscopy (NSOM) with photoconductivity contrast is used to map the transport properties of stretch-oriented poly(p-phenylene vinylene) thin films on a 150 nm length scale. Near-field photoconductivity is highly sensitive to film morphology and contrast is observed even in films with uniform photoluminescence. Regions of relatively higher photocurrent signals are correlated to regions with higher molecular order which have contrast approaching 15%. In addition, the photocurrent signal decreases sharply as the near-field tip approaches the surface of the film while at the same time the photoluminescence signal increases. The sharp decrease is attributed to the perturbation of the applied electric field within the polymer film by the metal on the NSOM tip. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125465
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  • 8
    Electronic Resource
    Electronic Resource
    External quantum efficiency of single porous silicon nanoparticles (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1978-1980 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We use a combination of single nanoparticle luminescence and scanning force microscopy to determine the quantum efficiency (QE) of single porous Si nanoparticles and to determine the ratio of luminescent nanoparticles deposited on a silica surface to the total nanoparticles. An estimate of the QE of bulk porous Si based on these data compares favorably to the QE measured experimentally. From this we conclude that the 1% QE of bulk porous Si measured experimentally results primarily from a statistical distribution of high QE quantum-confined Si chromophores. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123719
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  • 9
    Electronic Resource
    Electronic Resource
    Near-field photoconductivity: Application to carrier transport in InGaAsP quantum well lasers (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2654-2656 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new contrast method in near-field scanning optical microscopy in which the near-field probe is used to excite photocurrent in a semiconductor sample is described and demonstrated. The use of near-field optics results in an order-of-magnitude improvement in spot size and a fivefold improvement in resolution over previous methods of photocurrent imaging. The application of this near-field photoconductivity technique to a multiquantum well laser provides direct visualization of carrier transport throughout the structure, yielding information on growth inhomogeneities, carrier leakage and isolation, and the overall quality of p-n junctions. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112593
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