Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
75 (1999), S. 2494-2496
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Nanoscale field-effect transistor (FET) has been fabricated from single-walled carbon nanotubes (CNTs). At ∼5 K, the transistor shows pronounced field effect. Most interestingly, reproducible spikes are observed in the channel conductance as a function of the gate voltage. These conductance spikes are attributed to van Hove singularities in the electronic density of states in the carbon nanotubes. Based on the observation of these conductance spikes, a mechanism is proposed for the charge transport in CNT FETs. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.125059
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