ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
InxGa1-xAs1-yNy/Al0.33Ga0.67As multiquantum wells grown by plasma-assisted molecularbeam epitaxy are studied by resonant inelastic light scattering. Sharp vibration modes have beenobserved at 323, 402, 454 and 501 cm-1. Their intensities resonate at the barrier bandgap reduced bythe presence of N. Their resonance energies reveal the influence of the N concentration on thebarrier gap at the multiquantum well interfaces. These peaks are interpreted in terms of localvibrations involving the pairing of N atoms, which seems to occur mostly at the quantum wellinterfaces due to preferential bonding of N to Al
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.518.17.pdf
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