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  • 1
    Digitale Medien
    Digitale Medien
    s.l. : American Chemical Society
    Langmuir 7 (1991), S. 704-708 
    ISSN: 1520-5827
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 639-642 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Implantation of 150-keV oxygen into silicon to a dose of 2×1018 cm−2 at 600 °C resulted in a silicon-on-insulator structure. Annealing was carried out at 1150, 1200, and 1250 °C. The top silicon layer was removed, and metal contacts were evaporated to form capacitors for C-V and C-t measurements. The values of all the electrical parameters measured changed with annealing temperature. Oxide charge and doping density in the underlying silicon decrease with increasing annealing temperature. The capacitance relaxation time after pulsing into deep depletion, and the carrier generation lifetime increase with increasing annealing temperature. Low values of doping density and high values of capacitance relaxation time are desirable for supporting high voltages across such a structure.
    Materialart: Digitale Medien
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  • 3
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2103-2105 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A silicon-on-insulator structure was formed by implanting 2×1018 oxygen ions cm−2 into crystalline silicon at 150 keV. A systematic investigation of the effect of annealing temperature was carried out by annealing for 6 h at temperatures of 1150, 1200, 1250, and 1295 °C. The microstructure and oxygen-concentration profile were investigated by using cross-sectional transmission-electron microscopy and Auger analysis. Changes were observed to occur throughout this annealing-temperature regime. After the highest annealing temperature, a single-crystal top silicon-layer of 150 nm with 4×109 dislocations cm−2 and no oxide precipitates was obtained. The 500 nm of buried oxide has very sharp interfaces, and contains crystalline-silicon inclusions near the interface with the substrate silicon.
    Materialart: Digitale Medien
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  • 4
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2592-2594 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Generation lifetime and surface generation velocity were measured by capacitance transient analysis of metal-oxide-semiconductor capacitors to study the effect of high-energy neutron irradiation in the fluence range 1012–1014 cm−2. Thirty-minute isochronal anneals show that the generation lifetime and surface generation velocity recover their preirradiation values at 470 °C, which is close to the temperature for annealing of recombination lifetime decreases produced by electron irradiation. The relatively low value of annealing temperature for the recovery of lifetime after neutron irradiation is in sharp contrast with the improved thermal stability of lifetime effects produced by ion implantation into silicon when compared to the case of electron irradiation.
    Materialart: Digitale Medien
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  • 5
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4951-4954 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Thin films of YBa2 Cu3 O7−x with three types of c-axis alignment have been prepared by evaporation: unaligned films on oxidized silicon with zero-resistance transition temperatures as high as 88 K (the highest value reported for thin films of this superconductor on this substrate), films with regions aligned along each of the three 〈100〉 directions of the (100) SrTiO3 substrate, and films with the c-axis perpendicular to the (100) SrTiO3 plane. Typical values of critical current density (A cm −2 ) at 77 K are 102 , 3×104 , and 106, respectively. The temperature dependence of the critical current density is similar for the three types of films; it increases linearly with decreasing temperature, which is suggestive of a flux creep-limited model.
    Materialart: Digitale Medien
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  • 6
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 417-418 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Thin films of YBa2Cu3O7 formed by ambient temperature deposition and furnace post-annealing have been obtained at annealing temperatures around 750 °C and an oxygen partial pressure of 29 Pa. The zero resistance transition temperature of these smooth films on LaAlO3 was 89 K, and a critical current density in excess of 1 MA cm−2 at 77 K was found by transport measurements.
    Materialart: Digitale Medien
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  • 7
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5295-5297 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Microwave surface resistance close to 10 GHz has been measured as a function of temperature for epitaxial thin films of YBa2Cu3O7 (YBCO) on LaAlO3 in the film thickness range of 0.2–0.8 μm. The films were made by a reduced-temperature post-anneal technique. The surface resistance (Rs) scaled to 10 GHz decreases with increasing film thickness as is expected due to the finite film thickness with respect to the magnetic penetration depth. Below about 70 K there is an increase in Rs for the thickest films, attributed to a change in microstructure from c axis normal to the substrate plane, to c axis in the plane of the substrate; the resulting minimum in Rs occurs at a film thickness of 0.6 μm. The critical current density (Jc) at 77 K is highest for the thinner films, so that films with the highest Jc do not have the lowest measured Rs. These results suggest that the optimum YBCO film thickness for microwave devices patterned from these films may be about 0.6 μm, depending on operating temperature.
    Materialart: Digitale Medien
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  • 8
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2514-2516 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The surface resistance Rs of YBa2Cu3O7 (YBCO) thin films (0.6±0.1 μm) deposited onto 2.5-cm diam (100) LaAlO3 substrates has been measured at 22 GHz using both Cu and Nb cavities. The surface resistance falls precipitously at the superconducting transition (Tc =90 K) from a normal state value of approximately 2 Ω to a 77 K value of 13.7±1 mΩ, which is 1.6 times lower than Cu. At 4 K the surface resistance is 1±0.1 mΩ, as measured in a Nb superconducting cavity, which is an order of magnitude lower than Cu. The critical current density at 77 K is 4.5×104 A/cm2. Pole figure analyses show the ratio of c-axis to a-axis-oriented material in the film is 2.4:1. YBCO films deposited onto either LaGaO3 or LaAlO3 substrates with varying c/a ratios yield surface resistance values at 77 K that are crudely correlated with Rs. Therefore, the principal effect of orienting the material is to improve the sharpness of the high-frequency superconducting transition, consistent with the notion that the sharpness is associated with intergranular rather than intragranular properties.
    Materialart: Digitale Medien
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  • 9
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2719-2721 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Thin films of the high-temperature superconductor YBa2 Cu3 O7−x have been produced on (100) LaAlO3 substrates by coevaporation and furnace annealing. A 14-μm-wide and 400-μm-long constriction patterned on a 0.8-μm-thick film had a zero resistance transition temperature of 90 K, a transition width of 1.5 K, and a critical current density of 8×104 A cm−2 at 77 K. Although x-ray diffraction shows a definite c-axis alignment normal to the substrate plane, further analysis reveals that c-axis alignment in the substrate plane is also present. The detailed microstructural picture is revealed by transmission electron microscopy: a continuous layer, about 0.2 μm thick adjacent to the substrate, with c axis normal to the substrate plane, and the remaining top portion of the film, with the c axis in the film plane. In spite of the bilayer structure, the film remains epitaxial (the axes of the superconductor are parallel to the 〈100〉 directions of the substrate).
    Materialart: Digitale Medien
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  • 10
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2566-2568 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Superconducting thin films of YBa2Cu3O7−x in the thickness range of 0.2–0.9 μm were tested in this study. A zirconia buffer layer was used to minimize interdiffusion on oxidized silicon and polycrystalline alumina substrates. The highest zero resistance transition temperatures (85 K for oxidized silicon and 86 K for polycrystalline alumina) were obtained for the thicker films; these are the highest values reported for thin films of this superconductor on these substrates. The thickness and annealing dependence of the transition temperature suggests that interdiffusion limits the performance of the thinner samples.
    Materialart: Digitale Medien
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