Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
74 (1993), S. 2064-2066
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Schrödinger and Poisson equations are solved self-consistently to calculate the quantum mechanical properties of the quantum well (QW) formed in SiGe/Si/SiGe strained layer modulation doped field effect transistors. The strain produces an electron quantum well in Si. The two-dimensional electron gas distribution is calculated to show excellent confinement at low temperature. The confinement is poor at very low electron concentration at room temperature. However, it improves with increasing number of channel electrons. Moreover, a large electron concentration in a wide QW may result in the loss of confinement.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.354771
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