ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The performance and stability of a-SiGe:H single junction p-i-n solar cells with interfacial layers at the p/i and the i/n interfaces are reported. It is found that interfacial layers have a strong influence both on the initial performance as well as on the stability of these devices. The device structure, which consists of glass, conductive transparent oxide (SnO2 ), p(a-SiC:H), a-Si:H (buffer layer), graded interface layer (1.7 eV–1.5 eV), i (2500 A(ring), 1.5 eV), inverse graded interface layer (1.5 eV–1.7 eV), and n (a-Si:H), results in the highest long-term performance. This device structure has resulted in a conversion efficiency of 10.1% with short-circuit current density of 20 mA/cm2 .
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.102164
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