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  • 1
    Electronic Resource
    Electronic Resource
    On the Route towards Efficient Light Emitting Diodes Based on Porous Silicon (1997)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 54 (Aug. 1997), p. 27-36 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/25/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.54.27.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Porous-silicon microcavities (1996)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 18 (1996), S. 1213-1223 
    Details
    ISSN: 0392-6737
    Keywords: Optoelectronic devices ; Other solid inorganic materials ; Electron states in low-dimensional structures (superlattices, quantum well-structures and multilayers) ; Quantum optics ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary The properties and preliminar applications of porous-silicon (p-Si) microcavities are here reported. These structures are based on a planar resonator formed by two narrow-band high-reflectance distributed Bragg reflectors separated by a thin active optical layer, all of which are made of p-Si layers. The accurate control of the electrochemical dissolution of Si lets us realize p-Si multilayers with the desired refractive indices sequence. Large improvements of the emission properties of p-Si microcavities with respect to standard p-Si samples are observed: 1) increased emission intensity, 2) spectral narrowing of the emission band, and 3) high directionality in the emission pattern. Resonant-cavity light-emitting diodes with higher efficiencies and stabilities with respect to standard p-Si/metal devices are demonstrated. Reflectivity changes due to absorption saturation have been observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02464699
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  • 3
    Electronic Resource
    Electronic Resource
    Temperature dependence of the photoluminescence of all-porous-silicon optical microcavities (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 1760-1764 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence measurements in all-porous-silicon optical microcavities (PSM) are reported over a wide temperature range. Both continuous wave and time resolved measurements have been performed. The microcavity is formed by an all porous silicon Fabry–Perot filter made by two distributed Bragg reflectors separated by a λ-thick PS cavity layer. The luminescence properties of PSM are changed with respect to those of PS: a temperature independent narrowing in the emission line shape, a different temperature dependence of the emission intensity, and a fractional shortening of the luminescence decay time over the 50–300 K temperature interval are achieved. The PSM luminescence properties are explained by the spatial redistribution of the spontaneous emission, by an effective refractive index probed by the photon mode confined in the cavity layer and by the coupling between the singlet exciton state and the photon mode confined in the cavity layer. The saturation of the absorption of the distributed Bragg reflector is also addressed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369320
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  • 4
    Electronic Resource
    Electronic Resource
    Nonlinear optical properties of silicon nanocrystals grown by plasma-enhanced chemical vapor deposition (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 4607-4610 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The real and imaginary parts of third-order nonlinear susceptibility χ(3) have been measured for silicon nanocrystals embedded in SiO2 matrix, formed by high temperature annealing of SiOx films prepared by plasma-enhanced chemical vapor deposition. Measurements have been performed using a femtosecond Ti–sapphire laser at 813 nm using the Z-scan technique with maximum peak intensities up to 2×1010 W/cm2. The real part of χ(3) shows positive nonlinearity for all samples. Intensity-dependent nonlinear absorption is observed and attributed to two-photon absorption processes. The absolute value of χ(3) is on the order of 10−9 esu and shows a systematic increase as the silicon nanocrystalline size decreases. This is due to quantum confinement effects. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1456241
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  • 5
    Electronic Resource
    Electronic Resource
    Photoluminescence of localized excitons in pulsed-laser-deposited GaN (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3390-3392 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Continuous-wave photoluminescence (PL) and time-resolved photoluminescence of gallium nitride layers grown by pulsed laser deposition are compared. The temperature dependence of the photoluminescence decay time and the PL-integrated intensity allows a determination of radiative and nonradiative time constants of GaN. We find that luminescence peaks centered at 3.360 and 3.305 eV at low temperature can be attributed to recombination of excitons localized at extended defects. The photoluminescence radiative lifetime at room temperature is on the order of tens of ns. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122776
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