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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 1234-1236 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time-resolved photoluminescence decay caused by carrier trapping to the deep Fe level has been studied in epitaxial GaInP. Carrier trapping time is found to be strongly dependent on the Fe concentration up to 1×1018 cm−3. The electron capture cross section for the neutral iron level Fe3+, evaluated from the luminescence transients, is in the range from 6×10−16 to 1×10−15 cm2 for the temperature interval 70–250 K. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 1479-1481 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Impact neutralization coefficient for the reaction D−+e→D0+2e is reported, where D− and D0 are the negatively charged and neutral donor, respectively, and e is the conduction band electron. The coefficient was calculated using the Boltzmann transport equation and the scaled neutralization cross section of the negatively charged hydrogen atom. At liquid helium and lower temperatures the above reaction for n-GaAs and n-InP doped with shallow donors was found to be characterized by a relatively large impact neutralization coefficient. At weak electric fields, from about 0.2 to 1 V/cm, the neutralization coefficient increases exponentially and at higher fields saturates at the value of about 1.5×10−3 cm3/s for n-GaAs and 9×10−4 cm3/s for n-InP. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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