Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
85 (1999), S. 1234-1236
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Time-resolved photoluminescence decay caused by carrier trapping to the deep Fe level has been studied in epitaxial GaInP. Carrier trapping time is found to be strongly dependent on the Fe concentration up to 1×1018 cm−3. The electron capture cross section for the neutral iron level Fe3+, evaluated from the luminescence transients, is in the range from 6×10−16 to 1×10−15 cm2 for the temperature interval 70–250 K. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.369349
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