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  • 1
    Electronic Resource
    Electronic Resource
    Double waveguide in LiNbO3 by ion implantation (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1710-1712 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion implantation has been employed to produce superposed planar waveguide structures in LiNbO3. This was achieved by constructing two optical barriers at different depths beneath the crystal surface using 1.1 and 2.2 MeV He+. The composite refractive index profile was compared with those of the two individual barriers, by means of a dark mode analysis technique based on a calculation of the reflectivity function at the coupling prism. The profiles were found to be directly additive except for a noticeable annealing effect of the first implanted barrier, and a range enhancement of the second barrier. These effects were confirmed by varying the order and temperature of the implantations. The implications of these results to possible device construction have been discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102316
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  • 2
    Electronic Resource
    Electronic Resource
    Planar and channel waveguide fabrication in LiB3O5 using MeV He+ ion implantation (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2863-2867 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multiple energy He+ ion implantation to increase the width of the implantation-induced refraction index barrier in LiB3O5 (LBO) is reported. Improvements in planar waveguide transmission (coupling and propagation) at the HeNe laser wavelength of 633 nm, from 5% to 45% for TE polarized light, and from 10% to 28% for TM polarized light in a ∼5-mm-long LBO planar waveguide are shown. Annealing is found to increase the transmission (coupling and propagation) at the wavelength of 633 nm of multiple-energy implanted planar LBO waveguides by as much as 24% for TE polarized light and 71% for TM polarized light. Channel waveguides in LBO fabricated by multiple-energy ion implantation through a gold wire mask and their use for second-harmonic generation are reported. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361281
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  • 3
    Electronic Resource
    Electronic Resource
    Frequency doubling in ion-implanted KTiOPO4 planar waveguides with 25% conversion efficiency (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2695-2699 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Second-harmonic generation (SHG) has been successfully performed in ion-implanted planar waveguides in KTiOPO4. The waveguides were formed by helium implantation, and SHG was achieved using type 2 zero order mode phase matching at a wavelength of ∼1.07 μm. The results indicate that the high nonlinearity of the material remains in the guiding region after ion implantation. The conversion efficiency in a typical guide is estimated at ∼25% for ∼1 μJ pulsed excitation. At a lower input power level, the harmonic green output from the waveguide is 20 times higher than that from the bulk for the same amount of fundamental power. This clearly demonstrates the advantage of using waveguides in achieving frequency doubling for integrated optical devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353040
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  • 4
    Electronic Resource
    Electronic Resource
    "Missing modes'' in ion-implanted LiNbO3 waveguides (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1287-1289 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is demonstrated that in optical waveguides formed by ion implantation in LiNbO3, the lower modes for the extraordinary index exist in a buried region of enhanced index, and so may be unable to couple with a surface prism. This is because a shallow region of slightly reduced index near to the surface necessitates the tunnelling of power to these "missing modes.'' The number of such modes can be inferred from a comparison of data for two different wavelengths, and confirmation of this together with an estimation of their positions may be obtained by surface stripping. By taking them into account it has been possible to model the profile index by using a stepped base to the optical well.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101397
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  • 5
    Electronic Resource
    Electronic Resource
    Extra "strange'' modes in ion implanted lithium niobate waveguides (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1185-1189 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An extra "strange'' mode has been observed in the extraordinary index mode spectrum of certain optical waveguides produced by He+ ion implantation in LiNbO3. This behaves differently to the normal modes contained within the main optical well of the waveguide, for example when observed at varying wavelengths or after surface polishing. The mode has been shown to be a real guided-wave mode, and has been attributed to a subsidiary optical well located beyond the main nuclear damage optical barrier. It is suggested that this well is produced by the radiation-enhanced diffusion of Li+ towards the nuclear damage barrier, and the mechanism is compared with that responsible for the well on the near side of the barrier which causes the previously reported "missing'' modes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349596
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  • 6
    Electronic Resource
    Electronic Resource
    Ion implanted waveguides in polymethylmethacrylate (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4547-4548 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical waveguide profiles of He+ ion implanted polymethylmethacrylate have been analyzed. The surface index increases by up to 3% and the depth profile of the index is consistent with a diffusion limited decomposition of the target. This was confirmed by 77- or 300-K implants with a capping layer to inhibit decomposition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343927
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  • 7
    Electronic Resource
    Electronic Resource
    Ion-implanted optical waveguides in KTaO3 (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 49-52 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical waveguides have been formed by helium-ion implantation in KTaO3. The implantation forms a confinement barrier near the projected range of the ion by decreasing the refractive index as much as 16% for ion doses of 4×1016 ions/cm2. This is the highest refractive-index change yet reported for ion-implanted crystalline planar waveguides. Guiding modes (with moderately low loss) are produced without the need for annealing out of color centers. During annealing studies, the index change reduces during an anneal stage near 400 °C, but waveguiding is maintained even after anneals to 900 °C. Loss measurements indicate a planar-waveguide loss of 〈1 dB/cm after a 400 °C anneal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350684
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  • 8
    Electronic Resource
    Electronic Resource
    Characterization of ion implanted waveguides in Nd:YAG (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3440-3446 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion implantation into Nd:YAG has been used to produce waveguides which are capable of supporting laser action. The refractive index profiles have been characterized as a function of ion dose and energy, implant temperature, and subsequent thermal annealing. Transmission losses down to 1.2 dB/cm have been obtained in the optimized waveguides. There is a temperature independent index enhancement of ∼0.15% in the electronic stopping (guiding) region. The nuclear collision damage is temperature dependent, and shows an initial index increase (∼0.3% for dose 1 × 1016 ions/cm2), but a subsequent decrease of up to several percent, which forms an optical barrier, as has been observed in many other crystalline materials. The best mode confinement and attenuation is obtained by utilizing the low dose nuclear index enhancement produced by several equally spaced implants (multiple energy) to give a broad well with Δn∼0.25%. Several unusual features of the profiles are reported and discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348962
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  • 9
    Electronic Resource
    Electronic Resource
    Second harmonic generation capabilities of ion implanted LiNbO3 waveguides (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 5180-5183 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are reported on the depth profile of the nonlinear optical capabilities (d33) of He+ ion-implanted LiNbO3 waveguides. Reflected second harmonic generated light has been measured for guides formed by implant doses ranging from 5×1014 to 2×1016 ions/cm2. Directly after the irradiation the nonlinearity in the waveguide region is reduced to ∼75% that of virgin LiNbO3 for doses higher than 3×1015 ions/cm2. At the optical barrier the nonlinearity becomes zero for doses above 1×1016 ions/cm2. Annealing at 200 °C completely recovers the nonlinearity of the waveguiding layer, as well as reducing absorption losses within the guide. For the highly disordered material in the barrier, the harmonic signal shows that only partial recovery of the structure occurs, even by annealing at higher temperatures. This difference in response allows the production of low loss waveguides with high nonlinearity. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368811
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  • 10
    Electronic Resource
    Electronic Resource
    Buried double waveguide by ion implantation in quartz (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 89-91 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion implantation may be used to produce barrier-confined optical waveguides in many crystalline materials by decreasing the refractive index in the nuclear stopping region at the end of the ion's track. In quartz this is particularly effective as the nuclear damage soon saturates at ∼5%, and also practically no index change occurs along the initial part of the track, thus enabling multiple-energy implants to produce broad, flat barriers. We report the use of this technique in the construction of a device with two such barriers at different depths, thus producing a pair of overlayed waveguides. The profile of this composite system could not be determined by any conventional mode analysis method, and so we have extended our dark mode reflectivity technique to cope with multiple barriers. It has proved a very powerful tool for this application, able to probe at sufficient depth below the surface to supply accurate information about the entire double profile.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100357
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