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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Macromolecules 14 (1981), S. 1091-1103 
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 100 (1978), S. 2240-2242 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Abdominal imaging 19 (1994), S. 546-548 
    ISSN: 1432-0509
    Keywords: Liver neoplasms, lipoma ; Liver, US, CT, MRI and angiography
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract We experienced a case of surgically proven hepatic angiomyolipoma, a rare primary benign lipomatous tumor, which was preoperatively diagnosed by defining of its characteristic histologic components and benign radiologic nature with various imaging modalities. It was the first case that full radiologic evaluation was taken and internal vascular proliferation was defined by using dynamic bolus computed tomography (CT) prior to angiography.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 39 (1974), S. 0 
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Spectrochimica Acta Part B: Atomic Spectroscopy 44 (1989), S. 795-806 
    ISSN: 0584-8547
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3640-3644 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si/Pd-based contact schemes based on the solid-phase regrowth (SPR) process have been developed to form low-resistance ohmic contacts to n-Al0.5In0.5P (Eg=2.3 eV) with a minimum contact resistivity of about 6×10−6 Ω cm2. The SPR process responsible for the ohmic contact formation was verified using cross-sectional transmission electron microscopy. The contact resistivity of the Si/Pd-based contacts remained in the range of 2–3×10−5 Ω cm2 after aging at 400 °C for 25 h. Furthermore, a lateral modulation disordering phenomenon as a result of the SPR process in the regrown AlInP layer has been observed. These ohmic contacts may be useful in some novel Al0.5In0.5P-related device fabrication schemes. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1365-2222
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Background A variety of genes are related to allergic disorders in different ethnic populations. The genetic basis for the gender discrepancy of allergic diseases remains to be determined.Objective This study was conducted to investigate whether IL-4 promoter (−590 C/T) and cytotoxic T lymphocyte antigen 4 (CTLA-4) (+49 A/G) polymorphisms were correlated with a gender discrepancy of total IgE levels and allergic diseases in a Chinese population.Methods A total of 1333 participants aged 19–49 years were enrolled in this study. Allergic diseases were recognized by the presence of asthma, rhinitis or atopic dermatitis in conjunction with detectable specific IgE in the blood. Polymorphisms of IL-4 promoter (−590) and CTLA-4 (+49) were determined by restriction fragment length polymorphism.Results Males or females with allergic diseases had higher total IgE levels than those without (P=0.000). Females with the A/A genotype in the CTLA-4 (+49) position had significantly higher total IgE levels than those with A/G, and those with the G/G genotype had the lowest IgE levels (154.9 vs. 107.1 vs. 79.8 KU/L; mean log values: 1.79 vs. 1.65 vs. 1.54, P〈 0.001). However, males with different genotypes in the CTLA-4 (+49) position exhibited no difference in the total IgE levels. Females with allergic rhinitis had a significantly higher frequency of the A/A genotype in the CTLA-4 (+49) polymorphism than those without atopic diseases (P=0.016). In contrast, males with and without allergic disorders exhibited no significant difference in the CTLA-4 (+49) polymorphisms (P〉0.05). The IL-4 promoter (–590) polymorphisms, however, had no correlation with the total IgE levels or allergic diseases in either females or males.Conclusion In females only, the CTLA-4 (+49), but not the IL-4 promoter (−590), polymorphism was significantly associated with elevation of total IgE levels and allergic rhinitis. Here, we have, for the first time, demonstrated a gender-linked genetic relationship with allergic disease.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of organic chemistry 46 (1981), S. 4188-4193 
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1471-1476 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Excess As is incorporated in GaAs grown at low substrate temperatures by molecular beam epitaxy. Excess As is distributed in the epilayer as defects and the material exhibits considerable strain. When annealed to moderate temperatures, the strain is seen to disappear and the excess As is now in the form of semimetallic clusters. It has been proposed that these As clusters form buried Schottky barriers with the GaAs matrix and are surrounded by spherical depletion regions. In this article, we examine the effects of doping on the material properties and compare our results to the buried Schottky barrier mode. Si-doped GaAs epilayers grown at 250 °C, with doping densities between 5×1017 and 5×1018 cm−3, were annealed to temperatures between 700 and 1000 °C for 30 s. Be-doped GaAs epilayers grown at 250 °C, with doping densities between 5×1017 and 5×1019 cm−3, were annealed to temperatures between 700 and 900 °C for 30 s. Using extensive Hall measurements and transmission electron microscopy, we observe that the As precipitates deplete the surrounding GaAs matrix. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 981-983 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report molecular beam epitaxial growth of InAs on GaP(001), which has the largest lattice mismatch (11%) among all the arsenides and phosphides. Reflection high-energy electron diffraction and high-resolution transmission electron microscopy were used to optimize the growth and characterize the epilayer. It is found that the growth mode can be controlled by the surface V/III ratio: three-dimensional and two-dimensional layer-by-layer growths under As-stable and In-stable conditions, respectively. In both cases, a regular network of pure edge-type (90°) misfit dislocations with a spacing of 4 nm was formed directly at the heterointerface, which corresponds to 85% of degree of strain relaxation. The epilayers grown under In-stable conditions have relatively smooth surfaces with low threading dislocation densities. This is owing to the fact that the interface misfit dislocations were exclusively of the edge-type which have no threading component and which relieve strain most effectively. The results demonstrate the ability to control the growth mode as well as the misfit dislocation nucleation type. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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