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  • 1
    Electronic Resource
    Electronic Resource
    Epitaxial growth of lattice mismatched SrF2 films on (100) GaAs (1992)
    Springer
    Applied physics 54 (1992), S. 284-287 
    Details
    ISSN: 1432-0630
    Keywords: 81.10 ; 81.15 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract For the first time insulating epitaxial SrF2 films on (100) GaAs substrates have been grown by thermal deposition followed by in situ annealing process. Structural properties of SrF2 films examined by X-ray diffraction, scanning electron microscopy and transmission electron microscopy indicate a very good crystalline quality. It is observed from the X-ray analysis that SrF2 layers thinner than 100 nm suffer two dimensional compressive stress due to the lattice misfit while those thicker than 100 nm suffer two dimensional tensile stress due to the difference in the thermal expansion coefficients.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323851
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical properties of polyimide on n-GaAs (100) interfaces by a pulsed laser evaporation technique (1993)
    Springer
    Applied physics 56 (1993), S. 353-354 
    Details
    ISSN: 1432-0630
    Keywords: 73.40 ; 81.10 ; 81.15
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Incorporation of a thin insulating layer of polymer-like polyimide deposited by pulsed laser evaporation technique between metal and n-GaAs has resulted in diode structures with MIS and Schottky-barrier-type capacitance-voltage and current-voltage characteristics. These structures have the potential to be useful in improving the performance of GaAs FETs for microwave and high-speed applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324355
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Bioequivalence studies in humans of indomethacin capsules marketed in India (1984)
    Springer
    European journal of clinical pharmacology 26 (1984), S. 261-264 
    Details
    ISSN: 1432-1041
    Keywords: indomethacin capsules ; bioequivalence ; volunteers ; pharmacokinetics ; statistical significance ; bioavailability ; comparative bioequivalence
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Medicine
    Notes: Summary Two, separate 6×6 Latin square cross-over bioequivalence studies were performed in adult male volunteers using 10 different indomethacin capsule preparations marketed in India together with the pure drug powder as the standard. The products were evaluated with respect to plasma level at various times up to 8 h following administration of a 50 mg (2 × 25 mg) dose. Plasma samples were analysed by a fluorimetric method. Various pharmacokinetic parameters were calculated according to a two compartment model. Statistical evaluation of the data employed analysis of variance for a cross-over design (ANOVA) and Duncan's multiple range test to ascertain the significance of differences between the products. Of the 10 products studied, two were found to be bioinequivalent.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00630296
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Calcium fluoride thin films on GaAs(100) for possible metal-insulator-semiconductor applicationsa) (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 852-854 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Calcium fluoride thin films were deposited onto low-temperature GaAs substrates by thermal evaporation followed by an in situ or ex situ annealing process. The influence of the deposition and annealing conditions on the structure and electronic properties of the films were investigated. It is shown that it was possible to obtain smooth epitaxial layers through in situ annealing. In addition, the substantial improvements in the electrical properties of the interfaces between GaAs and CaF2 have been obtained by in situ substrate annealing of CaF2 on GaAs(100) at 590 °C for 10 s which produced a dramatic reduction of capacitance frequency dispersion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108545
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  • 5
    Electronic Resource
    Electronic Resource
    Studies on thin films of ZnSe prepared by a chemical deposition method (1992)
    Springer
    Journal of materials science 11 (1992), S. 1097-1099 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00730843
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    Paper (German National Licenses)
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