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  • 1
    Digitale Medien
    Digitale Medien
    Diffusion behavior of the spin valve structure (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7625-7627 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: NiMn/NiFe/Co/Cu/Co/NiFe/seed layer (sample No. 1) and NiFe/CoFe/Cu/CoFe/Ru/CoFe/NiFe/NiMn/Seed layer (sample No. 2), are investigated by using high resolution analytical transmission electron microscopy and an imaging filter. The compositional analysis demonstrated that the diffusions of the Mn and Ni into the Cu/Co bilayer are only observed in sample No. 1. This result indicated that the Ru layer in sample No. 2 might not only act as the spacer of the synthetic antiferromagnet but also behaves as a good diffusion barrier for the Ni and Mn element in the spin valve structure. The diffusion coefficients of constituent elements are simply investigated using the Matano–Boltzmann method. The diffusion mechanisms of Cu in Co layer and Co in Cu layer were primarily dominated by the grain boundary. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1357129
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  • 2
    Digitale Medien
    Digitale Medien
    Microstructural investigation of oxidized Ni/Au ohmic contact to p-type GaN (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3826-3832 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The microstructure of oxidized Ni/Au films on p-GaN was examined to elucidate the formation of a low resistance ohmic contact to p-GaN with a field-emission gun transmission electron microscope in conjunction with composition analyses. The p-GaN/Ni/Au samples were heat treated at 500 °C in air mainly composed of a mixture of crystalline NiO, Au, and amorphous Ni–Ga–O phases. Small voids adjacent to the p-GaN film were also observed. The as-deposited Au film converted into discontinuous islands containing small amounts of Ni that connect with p-GaN. NiO formed a continuous film at the surface that covers the Au islands and the amorphous Ni–Ga–O phases. Moreover, NiO partially contacts p-GaN as well as Au islands and the amorphous Ni–Ga–O phase. The orientation relationship of the crystalline NiO, Au-rich islands, and p-GaN film was identified as NiO(111)//Au(111¯)//GaN(0002) and NiO[11¯0]//Au[11¯0]//GaN[112¯0]. The results suggested that Ni atoms diffuse through the Au layer onto the surface and react with oxygen to form NiO, whereas Au atoms diffuse towards the inside to form a Au–Ni alloy. The microstructural examination indicated that the crystalline NiO and/or the amorphous Ni–Ga–O phases may significantly affect the low resistance ohmic contact to p-GaN. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.371294
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  • 3
    Digitale Medien
    Digitale Medien
    Transmission electron microscopy study of diamond nucleation on 6H-SiC single crystal with possibility of epitaxy (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 3444-3446 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Diamond has been grown on 6H-SiC single crystal wafers by microwave plasma assisted chemical vapor deposition with a negative bias pretreatment. A high nucleation density of diamond on the substrate has been achieved. Cross-sectional transmission electron microscopy was employed to study the interfacial microstructure of diamond on 6H-SiC. Lattice image observations illustrate that diamond is directly formed on the 6H-SiC substrate. The possibility of local epitaxial nucleation of diamond on the 6H-SiC substrate and its crystallography are briefly discussed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.109043
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  • 4
    Digitale Medien
    Digitale Medien
    Microstructure and Mechanical Property of Electron Beam Brazing and Vacuum Brazing Joints of Stainless Steel (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 532-533 (Dec. 2006), p. 564-567 
    Details
    ISSN: 1662-9752
    Quelle: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Thema: Maschinenbau
    Notizen: By means of optical microscope(OM), scanning electron microscope(SEM), X-raydiffraction(XRD) and shear test, the microstructure and mechanical property of 1Cr18Ni9Ti stainlesssteel brazed joints with BNi-2 filler by electron beam brazing(EBB) and vacuum brazing(VB) areinvestigated respectively. The results show that, the microstructures of brazed joint with BNi-2 byEBB are mainly solid solutions of Ni. And the microstructures of brazed joint by VB are composed oftwo parts: one part is a solid solution of Ni, which lies adjacent to base metal; another part is chemicalcompound structures present in the centre zone of brazing seam. The shear strength of brazed joint byEBB is higher than that of by VB. This is closely related with the microstructures of brazed joint
    Materialart: Digitale Medien
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.532-533.564.pdf
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  • 5
    Digitale Medien
    Digitale Medien
    Numerical Simulation of Temperature Field and Stress Field of Electron Beam Brazing Stainless Steel Radiator (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 575-578 (Apr. 2008), p. 649-653 
    Details
    ISSN: 1662-9752
    Quelle: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Thema: Maschinenbau
    Notizen: Aiming at the radiator with tube-to-plate structure applied usually in aeroplane, atwo-dimensional model for finite element analysis was established in this work. By ANSYS software,the temperature field and stress field of electron beam brazing (EBB) 1Cr18Ni9Ti stainless steelradiator by two kinds of process were numerically simulated. The calculated results of temperaturefield show, by the stage-by-stage heating process, the uniform temperature distribution of radiatorfaying face was obtained. The temperature of most regions is between 1042~1051°C, which is in therange of brazing temperature. The calculation results of stress field indicate, for radial residual stress,the obvious stress concentration region was found in faying face by direct-heating process; whilethere was no stress concentration in faying face by stage-by-stage heating process. For circumferentialresidual stress, compared the stage-by-stage heating process with direct-heating process, the peakvalue of tensile stress reduces by 11.2%. Compared circumferential residual stress with radial residualstress by two kinds of brazing process, the peak value of circumferential tensile stress is higher thanradial tensile stress. So the dangerous position of faying face is along circle direction, namely, theheating direction of scanning electron beam. Consequently, the temperature difference betweendifferent positions in faying face must be controlled well during heating. The reduction of temperaturedifference can fall the peak value of tensile stress and improve the distribution of residual stress
    Materialart: Digitale Medien
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/18/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.575-578.649.pdf
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  • 6
    Digitale Medien
    Digitale Medien
    Determination of the crystallographic directions and planes of features and of the misorientations of crystals with high accuracy and internal estimation of errors (1987)
    New York, NY : Wiley-Blackwell
    Journal of Electron Microscopy Technique 6 (1987), S. 55-61 
    Details
    ISSN: 0741-0581
    Schlagwort(e): Orientation ; Misorientation ; Goniometry ; Hexagonal lattices ; Life and Medical Sciences ; Cell & Developmental Biology
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Allgemeine Naturwissenschaft
    Notizen: Techniques are given for maximizing the accuracy of crystallographic measurements in the transmission electron microscope. In particular, line directions, plane orientations, and crystal misorientations are treated, and for each case the methods of data collection, refinement, and error estimation are given. These methods represent generalizations of Ball's optimizing crystallographic technique (Ball: Philos. Mag. A44:1307-1317, 1981), and we also provide extensions to hexagonal lattice applications.
    Zusätzliches Material: 2 Ill.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1002/jemt.1060060108
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