Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
69 (1996), S. 898-900
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
This study focused on the performance of commercial AlGaN/InGaN/GaN blue light emitting diodes (LEDs) under high current pulse conditions. The results of deep level transient spectroscopy (DLTS), thermally stimulated capacitance, and admittance spectroscopy measurements performed on stressed devices, showed no evidence of any deep-level defects that may have developed as a result of high current pulses. Physical analysis of stressed LEDs indicated a strong connection between the high intrinsic defect density in these devices and the resulting mode of degradation. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.116936
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